MOSFETS. RECTIFIER Search Results

tea1761

Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
Contextual Info: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220

OM6214SS

Abstract: OM6215SS OM6216SS OM6217SS
Contextual Info: OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • Two Isolated MOSFETs In A Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power

ultra low power mosfet fast switching

Abstract: Ultra Low voltage rds mosfet Ultra Low rds 50 Amp 100 volt mosfet OM6229SP2 ultra low idss
Contextual Info: OM6229SP2 FOUR UNCOMMITTED POWER MOSFETS, ULTRA LOW RDS on IN PLASTIC PACKAGES Four 100 Volt, Up To 60 Amp Ultra Low RDS(on) Power MOSFETs In Isolated Package FEATURES • • • • • Four Uncommitted MOSFETs In Low Profile Power Package Isolated Heat Sink Package

ultra low power mosfet fast switching

Abstract: OM6229SP2 50 Amp 100 volt mosfet
Contextual Info: OM6229SP2 FOUR UNCOMMITTED POWER MOSFETS, ULTRA LOW RDS on IN PLASTIC PACKAGES Four 100 Volt, Up To 60 Amp Ultra Low R ds (oii) Power MOSFETs In Isolated Package FEATURES • • • • • Four Uncommitted MOSFETs In Low Profile Power Package Isolated Heat Sink Package

bje resistor

Abstract: resistor BJE
Contextual Info: Data Sheet No. PD-6.059D nterna! fona Rectifier IR51H224 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

UPA2726UT1A

Abstract: UPA2725UT1A upa2725
Contextual Info: N- and P-Channel MOSFETs Key Features > Extremely low on-state resistance > Thin, high-power HVSON package > 4.5V gate-driven configuration Applications > Synchronous rectifiers in DC/DC converters > Notebook computers > Servers Power MOSFETs for DC/DC Conversion and Li-ion Battery Protection

IRFIP450

Abstract: IRFIP150 IRFIP250 IRFIP350 THOMSON DISTRIBUTOR 58e d IRFIP244 IRFI630 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR
Contextual Info: THOMSON/ DISTRIBUTOR sflE ç m Toab a73 ooos?^? 330 • tcs< HEXFET Power MOSFETs International .'*»1Rectifier FullPak N-Charmel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines,

infrared temperature measure

Abstract: mosfet MOSFET SO-8 IRF7805 IRF7807 IRF7809 IRF7811
Contextual Info: DT 99-2 DESIGN TIP International Rectifier 233 Kansas Street El Segundo CA 90245 USA Estimating T J of SO-8 Power MOSFETs by David Jauregui Background Method It is a fundamental industry need to accurately measure junction temperature TJ of power MOSFETs in an

infrared temperature measure

Abstract: mosfet IRF7805 IRF7807 IRF7809 IRF7811
Contextual Info: DT 99-2 DESIGN TIP International Rectifier 233 Kansas Street El Segundo CA 90245 USA Estimating T J of SO-8 Power MOSFETs by David Jauregui Background Method It is a fundamental industry need to accurately measure junction temperature TJ of power MOSFETs in an

OM6241SD

Abstract: transistor FS 22 SM sm 17 35 tc SM-150 diode
Contextual Info: OM6234SD/SM OM6236SD/SM OM6238SD/SM OM6240SD/SM OM6235SD/SM OM6237SD/SM OM6239SD/SM OM6241SD/SM DUAL POWER MOSFETS IN HERMETIC ISOLATED DUAL IN-LINE PACKAGES 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • • • • • • Two Isolated MOSFETs In A Hermetic Metal Package, Size 3 And 4 Die

IRLML0030

Abstract: IRLB3034 IRFB4110 irfp4004 irls4030 IRFB4020PBF IRFP4568 IRFP4229 HEXFEt Power MOSFET Design Guide IRLB3036
Contextual Info: Benchmark MOSFETs | Selection Guide Product Line Overview Broad Portfolio of MOSFETS Targeting Multiple Market Segments Industrial Key Differentiators Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
Contextual Info: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net

OSKJ

Abstract: F9220 IAFF9221 IRFF9220 IRFF9221 IRFF9222 IRFF9223 IRFF9221I 92CS-43262
Contextual Info: Rugged Power MOSFETs File Number IRFF9220, IRFF9221 IRFF9222, IRFF9223 2288 Avalanche-Energy-Rated P-Channel Power MOSFETs -2 A and -2.5 A, -150 V and -200 V rDsioni = 1.5 O and 2.4 O TERMINAL DIAGRAM

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

IRF720R

Abstract: IRF722R IRF723R IRF721R
Contextual Info: Rugged Power MOSFETs File N u m b er IRF720R, IRF721R IRF722R, IRF723R 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V rDs on = 1.80 and 2.5fi Features: • Single pulse avalanche energy rated

8 soic pcb footprint

Abstract: 16 soic pcb footprint Sn60Pb40 so8 footprint FOOTPRINT PCB footprint soic Sn60Pb40 solder
Contextual Info: DT 99-3 DESIGN TIP International Rectifier 233 Kansas Street El Segundo CA 90245 USA Hand-Soldering SO-8 MOSFETs by David Jauregui Hand-soldering SO-8 MOSFETs to a printed circuit board PCB may cause damage if not done properly. This Design Tip describes how to properly hand-solder SO-8 devices to PCBs.

16 soic pcb footprint

Abstract: Sn60Pb40 so8 footprint footprint soic FOOTPRINT PCB PCB footprint 8 soic pcb footprint Kester sn60pb40
Contextual Info: DT 99-3 DESIGN TIP International Rectifier 233 Kansas Street El Segundo CA 90245 USA Hand-Soldering SO-8 MOSFETs by David Jauregui Hand-soldering SO-8 MOSFETs to a printed circuit board PCB may cause damage if not done properly. This application note describes how to properly hand-solder SO-8 devices to PCBs.

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

IRF827

Abstract: IRF626 IRF625 IRF624 IRF627 IIRF624
Contextual Info: _Rugged Power MOSFETs IIRF624, IRF625, IRF626, IRF627 File Number 2167 Avalanche Energy Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE 3.8A, and 3.3A, 275, 250V I ds on = 1.10, and 1.50 Features: • Single pulse avalanche energy rated

IRFD9123

Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Contextual Info: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:

IRFP150R

Abstract: IRFP152R J50 mosfet Transistors MBI DC converter 50A 100V IRFP152 IRFP151R IRFP153R S-20 TO247 package dissipation
Contextual Info: _ Rugged Power MOSFETs File Num ber 2015 IRFP150R, IRFP151R, IRFP152R, IRFP153R Avalanche Energy Rated N-Channel Power MOSFETs 33A and 40A, 60V-100V fDs on = 0.0550 and 0.080 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

IRFPC40R

Abstract: IRFPC42R
Contextual Info: Rugged Power MOSFETs . IRFPC40R, IRFPC42R File Number 2158 Avalanche-Energy-Rated N-Channel Power MOSFETs 6.8A and 5.9A, 600V Tdsioo = 1.20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Isolated Central Mounting Hole u Repetitive Avalanche Ratings m Simple Drive Requirements

irfd113

Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
Contextual Info: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated