SIHF Search Results

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

IRFP360LC

Contextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve

IRF820PBF

Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements

TO-247 Package

Contextual Info: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements

Contextual Info: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110

Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

irfpf40

Contextual Info: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Power MOSFETs Application Notes irf520

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

flyback xfmr 3.5 mh

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)

Contextual Info: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole

910410

Contextual Info: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated

Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

irfbe30

Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

MH 1004 SMPS

Contextual Info: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage