MOSFET 600V TO92 Search Results

1NK60Z

Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω

Contextual Info: N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.  VDS = 600V  ID = 0.4A  RDS ON ≤ 8.5Ω

JESD97

Abstract: STD1LNK60Z-1 STN1NK60Z STQ1NK60ZR-AP
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω

1Nk60

Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω

smps 5v 0.3A

Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
Contextual Info: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical

MOSFET 4600

Abstract: smps 5v 0.3A 4600 mosfet inverter
Contextual Info: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical

Contextual Info: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical

F2HNK60Z

Abstract: D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1
Contextual Info: STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID PTOT STD2HNK60Z 600V <4.8Ω 2A 45W STD2HNK60Z-1 600V <4.8Ω 2A 45W

FTN035N60

Contextual Info: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：

BALLAST CFL

Abstract: FTN01N60
Contextual Info: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：

mosfet 600v 0.4a to-92

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL MOSFET 600V - 13 Ω - 0.8A General features Type L1N60A L1N60A VDSS RDS on ID Pw 600V <15Ω 0.3A 3W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ New high voltage benchmark

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL 600V - 13Ω - 0.8A - TO-92 Zener-Protected SuperMESH Power MOSFET General features L1N60A Type VDSS RDS on ID Pw STQ1NK60ZR 600V <15Ω 0.3A 3W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized

power mosfet 600v

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

marking 724 diode sot-363

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

1n60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1N60B

Contextual Info: HY1N60B 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UTC1N60

Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1n60ag

Abstract: 1N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche