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BALLAST CFL Abstract: FTN01N60 Contextual Info: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：	Original	FTN01N60 BALLAST CFL FTN01N60	PDF

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BALLAST CFL

Abstract: FTN01N60
Contextual Info: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：

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FTN01N60 BALLAST CFL FTN01N60

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