1N60P Search Results

1N60 diode

Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
Contextual Info: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC

1N60P

Abstract: ST60P 1N60S 20PF
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1

1N60P

Abstract: marking code ma
Contextual Info: 1N60PWS Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION • High reliability 1 Cathode • Low forward voltage and reverse current 2 Anode 1 2 MA APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching

Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60P

Contextual Info: 1N60PWS SCHOTTKY BARRIER DIODE Features • High reliability • Low forward voltage and reverse current PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • For electronic calculator, etc. • Low current rectification and high speed switching MA

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

1n60

Abstract: 1N60P 1N60 Schottky
Contextual Info: MCC 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35

1N60P

Abstract: diode sod-123 marking code FN
Contextual Info: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS

1N60P

Abstract: 1N60 1N60 diode diode 1n60 1N60 Schottky Diode Equivalent 1N60 251n60
Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

1N60P

Abstract: 20pf
Contextual Info: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc

1N60P

Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
Contextual Info: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.

1n60 diode

Abstract: diode 1n60 1N60 1N60 diode resistance 1N60P DIODE 1n60p 1N60P, DO-35
Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

diode 1n60

Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

1N60 diode

Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Contextual Info: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir

Contextual Info: 1N60P Small Signal Schottky Diodes VOLTAGE RANGE: 45 V CURRENT: 0.1 A Features fffff DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics

1N60P

Abstract: 20PF
Contextual Info: ST 60 P SILICON SCHOTTKY BARRIER DIODE Silicon Schottky Barrier Diode Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. max. 1.90 Cathode M ark m ax. 0.520 Glass case JEDEC DO-35 Dimensions in mm

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

Contextual Info: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency

1N60 diode

Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
Contextual Info: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter