MOSFET 600V 100A ST Search Results

MOSFET 1000v 30a

Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
Contextual Info: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

MOSFET 600V 7A

Abstract: mosfet 600V 7A N-CHANNEL A11 MARKING TSM7N60 10SEC MOSFET A11 A11 MARKING CODE
Contextual Info: TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

mosfet 600V 9.5A N-CHANNEL

Abstract: 600v 75a fast recovery diode 600v 5A mosfet N-Channel 600V MOSFET n-channel mosfet transistor power mosfet 600v ITO-220
Contextual Info: Preliminary TSM10N60 600V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 0.75 @ VGS =10V 4.75 General Description The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

MOSFET 600V 7A

Abstract: mosfet 600V 7A N-CHANNEL N-Channel mosfet 600v 7A mosfet 600v transistor Electronic ballast mosfet 600V 7A N-CHANNEL TO N-Channel 600V MOSFET n-channel mosfet transistor ITO-220 MOSFET 600V switching
Contextual Info: Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

K 2915 MOSFET

Abstract: APQ02SN60AF SWITCHING DIODE 600V 2A MOSFET 40A 600V APQ02SN60AH 600V 2A MOSFET N-channel mosfet 600V 100A Mosfet 600V, 2A MOSFET 600V 2A
Contextual Info: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

TO 220 Package High current N CHANNEL MOSFET

Abstract: mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

1n60ag

Abstract: 1N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

DIODE F10

Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

Contextual Info: QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

FQD3N60C

Abstract: FQD3N60CTF FQD3N60CTM
Contextual Info: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB3N60C

Abstract: FQB3N60CTM mosfet 600V 3A
Contextual Info: TM QFET FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC120AM16CD3AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 16mΩ typ @ Tj = 25°C ID = 98A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features

20N60

Abstract: 20N60 mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UTC1N60

Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche