ITO-220
Abstract: TSM4N60CH
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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tsm4n60o-220ito-220o-251+2o-252tsm4n60ch
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TH 2190 mosfet
Abstract: ITO-220 TSM4N60CH 02402
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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tsm4n60o-220ito-220o-251+4o-252th 2190 mosfettsm4n60ch02402
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DIODE F10
Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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tsm4n60o-220ito-220o-251+4o-252diode f10tsm4n60czto-252 n-channel mosfet
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TSM4N60CH
Abstract: power mosfet 600v 18BSC ITO-220
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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tsm4n60o-220ito-220o-251+4o-252tsm4n60chpower mosfet 600v18bsc
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TO 220 Package High current N CHANNEL MOSFET
Abstract: mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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tsm4n60o-220ito-220o-251+10o-252to 220 package high current n channel mosfetmosfet 600v 100atsm4n60chn-channel mosfet transistorto-251to25218bsctsm4n60czto-252 n-channel power mosfet
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TO-252 N-channel MOSFET
Abstract: 600v 4A mosfet
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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tsm4n60o-220ito-220o-251+3o-252to-252 n-channel mosfet600v 4a mosfet
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