MOSFET 10A 500V Search Results

P channel MOSFET 1A

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

10n50

Abstract: TO-220F1 DIODE 531 mosfet 10a 500v 10N50G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

10N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

DM t 96 10a 250v

Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF10N50CF

Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

power mosfet 500v 20a circuit

Abstract: FDPF20N50F
Contextual Info: UniFETTM FDP20N50F / FDPF20N50F tm N-Channel MOSFET 500V, 20A, 0.26Ω Features Description • RDS on = 0.21Ω ( Typ.)@ VGS = 10V, ID = 10A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FP10W50VX2

Abstract: 2SK2190
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2186

Abstract: F10V50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2186 F10V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : TO-220 (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE

FDPF*12n50ut

Abstract: FDPF12N50UT
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

p11nk50zfp

Abstract: P11NK50Z P11NK50 B11NK50Z STP11NK50ZFP STB11NK50Z STB11NK50ZT4 STP11NK50Z
Contextual Info: STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STB11NK50Z STP11NK50Z STP11NK50ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.52 Ω < 0.52 Ω

IDA100

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

IXFR15N100Q3

Abstract: 15N100Q3
Contextual Info: Advance Technical Information IXFR15N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 10A Ω 1.2Ω 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

STB10NC50

Abstract: STB10NC50-1
Contextual Info: STB10NC50-1 N - CHANNEL 500V - 0.48Ω - 10A - I2PAK/D2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB10NC50-1 500 V < 0.52 Ω 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: PPJZ20N50 500V N-Channel MOSFET Voltage 500 V Current TO-3PN 20 A Features      RDS ON , VGS@10V,ID@10A<0.3 Ω 100% avalanche tested Improved dv/dt capability Low Gate Charge Comply with EU RoHS 2011/65/EU only Mechanical Data    

Contextual Info: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode

STP10NC50

Abstract: STP10NC50FP
Contextual Info: STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STP10NC50 STP10NC50FP 500 V 500 V < 0.52 Ω < 0.52 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery

2sk2188

Contextual Info: V X - ü v U - X /t9-M 0SFET VX-n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2188 F10F50VX2 500v fëfèm • 10a R A TIN G S A b so lu te Maximum R a tin g s m item s (Tc=25°C) p5 ^7 Symbol * fr Conditions m m a e Ratings Unit Storage Temperature