F16N Search Results

MDG06

Abstract: MDG07
Contextual Info: nou rri •M F16N SOP Type Part No. MDGOI MDG02 MDG06 MDG07 Device 1, 2 3, 4 5, 6 1. 4 3, 1. 4, 1, 3, 5, 2 5, 6 2, 3 5, 6 2 4 6 V ceo (V) Ic (A) 10 -1 0 -1 0 10 -1 0 -1 0 10 -1 0 10 50 -1 0 2 -2 -2 2 -2 -2 2 -2 2 0.5 -2 Pd (mW) Diode hpE (G|) 120—560 490

276 f16n

Abstract: vc 4050 PT7C PT7C4050 2n 4409 NRZ clock recovery
Contextual Info: Data Sheet PT7C4050 PLL with Integrated VCXO |

TH 2267

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: F16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max F16NK60Z 600 V < 0.42 Ω 14 A(1) 40 W STP16NK60Z 600 V < 0.42 Ω 14 A 190 W STW16NK60Z 600 V

mitsubishi plc FX64m SERIES

Abstract: FX-48MR Melsec* fx-64mr FX-64MR mitsubishi fx plc programming cable pin wiring diagram FX-32MR FX-80MR 12v 6A variable convertor diagram MELSEC FX-32MR PLC FX-32MT
Contextual Info: Issued March 1997 232-5216 Data Pack D Data Sheet RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.

mitsubishi plc FX64m SERIES

Abstract: FX-64MR YL 69 moisture FX-32MR MELSEC FX-32MR PLC Melsec* fx-64mr FX-128MR FX-80MR BCD to Binary convertor FX-48MT
Contextual Info: Issued March 1995 019-262 Data Pack D Data Sheet RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.

pspice model

Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v
Contextual Info: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model

Contextual Info: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

304E3

Abstract: rfd16n05sm9a 66E-6
Contextual Info: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Contextual Info: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.

melsec fx 48mr

Abstract: FX-48MR fed board 512 812 relay FX-80MR MELSEC FX-32MR PLC FX-24MR Melsec* fx-64mr FX-48MR connection mitsubishi Fx 24mr manual mitsubishi fx48-MR
Contextual Info: Issued March 1994 D17244 RS Mitsubishi FX programmable logic controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications. Historically PLCs have been used as replacements for

p16nk60

Abstract: p16nk60z 10249 F16NK60Z STF16NK60Z STP16NK60Z STW16NK60Z
Contextual Info: F16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max F16NK60Z 600 V < 0.42 Ω 14 A(1) 40 W STP16NK60Z 600 V < 0.42 Ω 14 A 190 W STW16NK60Z 600 V

F16N06

Abstract: 00u2 107E3 *16N06 16N06
Contextual Info: RFD16N06, RFD16N06SM fu HARRIS S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 6 0V • rDS<ON = 0 .0 4 7 U D R A IN F L A N G E ) • Temperature Compensating PSPICE Model

Contextual Info: Data Sheet PT7C4050 PLL with Integrated VCXO |

FX-EEPROM-4

Abstract: F2-20gf1 Melsec* fx-64mr TRIAC 8315 Mitsubishi FX48M FX-80MR FX-48MR YL 69 moisture mitsubishi FX-48MR FX-64MR
Contextual Info: Issued September 2001 232-5216 Data Pack D Data Sheet RS Mitsubishi FX Programmable Logic Controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.

f16n05

Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
Contextual Info: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model

F16N

Abstract: 25 j 3 pin
Contextual Info: Packages Available • M in i mold type .6 r Body Unit : mm 1 i dimension j r 2.0 '( 0 .8 J r 2.9 I .25 1608 (0 6 03 ) 21 2 5 (0805) 2913 (1 1 05 ) - - - Actual size UMT EM 3 i r j, S S T (U. S. / E u r o p e a n S O T -2 3 ) 3-Pin Enlarged x 3.0) UM4 5-Pin

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

W16NM50N

Abstract: F16NM50N
Contextual Info: STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500V - 0.21Ω - 15A - D2/I2PAK - TO-220/FP - TO-247 second generation MDmesh Power MOSFET Features VDSS @Tjmax Type RDS(on) Max ID 3 3 12 1 STB16NM50N 550V < 0.26Ω 15A STI16NM50N 550V < 0.26Ω

F16NM50N

Abstract: STB16NM50N STF16NM50N STI16NM50N STP16NM50N STW16NM50N W16NM50N 624s
Contextual Info: STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features VDSS @Tjmax Type RDS(on) max ID 3 3 12 1 STB16NM50N 550 V 0.26 Ω 15 A STI16NM50N 550 V 0.26 Ω

f16n05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,