FRM450D Search Results

P channel MOSFET 1A

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: h a r r is ^ S E M I C O N D U C T O R FRM450D, FRM450R, FRM45ÛH 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.6000 TO-204AA • Second Generation Rad Hard MOSFET Result» From New Design Concepts

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

mosfet 10a 500v

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R N-Channel mosfet 400v
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

2N7291

Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

IRF250N

Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
Contextual Info: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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