2N7295 Search Results

Contextual Info: 2N7295H1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100 IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

Contextual Info: 2N7295D, 2N7295R 2N72Q5H h a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H « jRadiation Hardened December1992 N-Channel Power MOSFETs Package Features • 20A, 250V, RDS(on) = 0.170S2 TO-2Q4AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 2N7295D 2N7295H 2N7295R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H 2N7295D, 2N7295R 2N7295H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 20A, 250V, RDS(on) = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

653u

Contextual Info: HARRIS S E M C O N » SECTOR SflE » 1*1 H A R R I S • 43 02 271 0 0 4 5 7 4 1 44b H I H A S ZN7Z95U,2N7295R 2N7295H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK254 D, R, H Radiation Hardened N-Channel Power MOSFETs December 1992 T -1 1 - 13

Contextual Info: 2N7295 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)60 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

2N7291

Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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