653U Search Results
653U Price and Stock
Panasonic Electronic Components ERJ-S12F3653URes Thick Film 1812 365K Ohm 1% 0.75W(3/4W) A±100ppm/A°C Sulfur Resistant Pad SMD Automotive T/R |
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ERJ-S12F3653U | Tape & Reel | 12 Weeks | 100,000 |
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Panasonic Electronic Components ERJ-U1DD1653UAnti-Sulfur Thick Film Resistor - 165 Kohm - ±0.5% - 0.75W - 2010 - -55°C to +155°C - AEC-Q200 - Tape&Reel |
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ERJ-U1DD1653U |
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ERJ-U1DD1653U | Tape & Reel | 12 Weeks | 5,000 |
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Panasonic Electronic Components ERJ-S12F6653URes Thick Film 1812 665K Ohm 1% 0.75W(3/4W) ±100ppm/°C Sulfur Resistant Pad SMD Automotive T/R |
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ERJ-S12F6653U |
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ERJ-S12F6653U | Tape & Reel | 12 Weeks | 100,000 |
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Panasonic Electronic Components ERJ-S12D6653U1812 ANTI-SULFU |
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ERJ-S12D6653U |
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ERJ-S12D6653U | Tape & Reel | 12 Weeks | 5,000 |
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Panasonic Electronic Components ERJ-S14D6653U1210 ANTI-SULFU |
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ERJ-S14D6653U |
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ERJ-S14D6653U | Tape & Reel | 12 Weeks | 5,000 |
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653U Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SHENZHEN HONGLI OPTO-ELECTRONIC CO.,LTD. Part Number: HL-653U4FC Rev:00 •Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 20 mA Peak Forward Current* IFP 160 mA Reverse Voltage VR 5 V Power Dissipation PD 40 mW Electrostatic discharge |
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hl-653u4fc10msec | |
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Contextual Info: SHENZHEN HONGLI OPTO-ELECTRONIC CO. ,LTD. Part Number: HL-653U6YC-T Rev:00 •Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 20 mA Peak Forward Current* IFP 160 mA Reverse Voltage VR 5 V Power Dissipation PD 85 mW |
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hl-653u6yc-t10msec642e-g01 | |
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Contextual Info: SHENZHEN HONGLI OPTO-ELECTRONIC CO.,LTD. Part Number: HL-653U6YC Rev:00 •Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 20 mA Peak Forward Current* IFP 160 mA Reverse Voltage VR 5 V Power Dissipation PD 40 mW Electrostatic discharge |
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hl-653u6yc10msec | |
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Contextual Info: SHENZHEN HONGLI OPTO-ELECTRONIC CO. ,LTD. Part Number: HL-653U16YC Rev:00 •Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 20 mA Peak Forward Current* IFP 160 mA Reverse Voltage VR 5 V Power Dissipation PD 85 mW |
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hl-653u16yc10msec642e-g01 | |
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Contextual Info: SHENZHEN HONGLI OPTO-ELECTRONIC CO. ,LTD. Part Number: HL-653U4FC Rev:00 •Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 20 mA Peak Forward Current* IFP 160 mA Reverse Voltage VR 5 V Power Dissipation PD 85 mW Electrostatic discharge |
Original |
hl-653u4fc10msec642e-g01 | |
DCM7
Abstract: Type DCM DCMX323U040AC2B 653u DCM243U100DC2B electrolytic capacitors dcmx 284U dcmx243u dcm273 DCMX
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OCR Scan |
005cv120hzdcm7type dcm+8 | |
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Contextual Info: tyvvys / FRF254D, FRF254R, FRF254H S e m ico n d ucto r y 7 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 250V, RDS on = 0.185S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
frf254dfrf254rfrf254h185s1+6 | |
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Contextual Info: Charge pump for White LED RN5T653 Development Specifications Rev. 1.8 2009/05/12 RICOH COMPANY, LTD. Electronic Devices Company This specification is subject to change without notice. RN5T653 CHARGE PUMP FOR WHITE LED Table of Contents 1. |
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rn5t653 | |
EMT CONDUIT
Abstract: ul listed conduit E22132 651SUS crouse-hinds locknut 66-2U 650SUS 653u 666US emt conduit set screw connector
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e-22132650sus651sus652us+14 | |
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Contextual Info: 2N7295D, 2N7295R 2N72Q5H h a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK254 D, R, H « jRadiation Hardened December1992 N-Channel Power MOSFETs Package Features • 20A, 250V, RDS(on) = 0.170S2 TO-2Q4AE • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
2n7295d2n7295r2n72q5hfrk254+6 | |
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Contextual Info: m a r r is SEMI CONDUCTOR 2N7296D, 2N7296R 2N7296H REGISTRATION PENDING Currently Available as FRF254 D, R, H _ . _ . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 17A, 250V, RDS(on) = 0.1850 TO-254AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts |
OCR Scan |
2n7296d2n7296r2n7296ho-254aa+6 | |
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Contextual Info: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
frk254dfrk254rfrk254h170s1+5 | |
LT3971-3.3
Abstract: LT3973-3.3
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OCR Scan |
3120ge472t250am3120gf712t200am3120gf552t250am3120gg812t200am+7 | |
653uContextual Info: HARRIS S E M C O N » SECTOR SflE » 1*1 H A R R I S • 43 02 271 0 0 4 5 7 4 1 44b H I H A S ZN7Z95U,2N7295R 2N7295H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK254 D, R, H Radiation Hardened N-Channel Power MOSFETs December 1992 T -1 1 - 13 |
OCR Scan |
zn7z95u2n7295rfrk2542n7295h+6 | |
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Contextual Info: TYPE CGR Computer Grade Aluminum Electrolytic Capacitor FEATURES: m O 33 t> L / Z t> n •Very Low ESR • High Reliability • Very High Ripple Current • -55°C to +105°C Operation The CGR capacitor manufactured by Aero M is specifically designed as a very low ESR, high |
OCR Scan |
151t250r2c3ph221t250r3c331t250r4ccgr471t250r5l3ph+5 | |
HARRIS SEMICONDUCTOR APPLICATION NOTESContextual Info: ^ U H a r r is U S E M I C O N D U C T O R FRK254D, FRK254R, F fí K2S4H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
frk254dfrk254ro-204ae100krad+5 | |
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Contextual Info: H A RR IS S E M I C O N D S E CT OR SflE ]> ¡T I H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF254 D, R, H • 43G2271 Q04S7MS CHI « H A S 2N7296D, 2N7296R 2N7296H Radiation Hardened N-Channei Power MOSFETs December 1992 |
OCR Scan |
frf25443g2271q04s7ms2n7296d+6 | |
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Contextual Info: !SJ H a r r is U U S E M I C O N D U C T O R FRF254D, FRF254R, F PiF2S4H 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 17A, 250V, RDS on = 0.1850 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts |
OCR Scan |
frf254dfrf254ro-254aa100krad+5 | |