2N7297 Search Results
2N7297 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N7297D | Harris Semiconductor | Radiation Hardened N-Channel Power MOSFETs | Original | 41.43KB | 4 | ||
| 2N7297H | Harris Semiconductor | Radiation Hardened N-Channel Power MOSFETs | Original | 41.43KB | 4 | ||
| 2N7297R | Harris Semiconductor | Radiation Hardened N-Channel Power MOSFETs | Original | 41.43KB | 4 |
2N7297 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q |
OCR Scan |
frm450m3ges71d04s7412n7297d+6 | |
2E12
Abstract: 2N7297D 2N7297H 2N7297R 3E12
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Original |
frm4502n7297d2n7297r2n7297h+7 | |
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Contextual Info: 2N7297R3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)30 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 |
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2n7297r3 | |
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Contextual Info: 2N7297H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)30 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 |
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2n7297h4 | |
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Contextual Info: d l H a r r is U U S E M I C O N D U C T O R 2N7297D, 2N7297R 2N72d7H REGISTRATION PENDING Currently Available as FRM450 D, R, H December 1992 Radiation Hardened N-Channel Power MOSFETs Package Features • 10A, 500V, RDS(on) - 0.600Q TO-204AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts |
OCR Scan |
2n7297d2n7297r2n72d7ho-204aa+6 | |
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Contextual Info: 2N7297H3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)30 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 |
Original |
2n7297h3 | |
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Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70 |
OCR Scan |
43q2271126x182frm230dfrm234d+2 | |
B402-6Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080 |
OCR Scan |
o-205afo-258aafre1602n7300+7 | |
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Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH) |
OCR Scan |
204aa205af257aa204ae+2 | |
FSL430
Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
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Original |
o-205afo-258aafrl230jansr2n7275+13 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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OCR Scan |
sx3704ap239transistor 801398c547+6 | |
2N7289
Abstract: 2N7308 2N7331
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OCR Scan |
frm130dfrm130rfrm130hfrm230d+9 | |
2N7291
Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
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Original |
mil-prf-19500/606bmil-prf-19500/606a2n72912n7293+6 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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OCR Scan |
1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7 |