MONOLITHIC DIODE ARRAYS Search Results

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

silicon general 16 pin ceramic dip J

Contextual Info: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight

IEC-801-2 ESD

Abstract: MONOLITHIC DIODE ARRAYS tvs-diode TVS RS422 TVS diode line voltage Application Note
Contextual Info: Ei8LC05 thru Ei8LC15 Low Capacitance, Bidirectional, Monolithic TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and

MMAD1109

Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

1N6510 JAN

Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Contextual Info: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

MMAD1107

Abstract: mmad1103 MMAD1105 MMAD1109 Ad1103
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching core-driver applications. These arrays offer many of the advantages of integrated

array networks

Contextual Info: Ei8LCXXX Monolithic Low Capacitance TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and surge protection for sensitive power and I/O

MMAD1108

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8-Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

CVD-450

Abstract: Laser Diode 808 nm
Contextual Info: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse­ nide Monolithic Quantum Well Arrays made by MOCVD

Contextual Info: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

SG6101J

Abstract: sg6101
Contextual Info: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

Contextual Info: CA3141 HARRIS SEMICONDUCTOR High-Voltage Diode Array For Commercial, Industrial & Military Applications March1993 Features Description • Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV Typ at lF - 1mA The CA3141E High Voltage Diode Array Consists of ten gen­

Contextual Info: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

Contextual Info: 1N5770 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

Contextual Info: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as

Contextual Info: TH-C1840-PI TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

Contextual Info: TH-C1840-P / TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

FSA2619P

Abstract: FSA2510M FSA2719M FSA2510P FSA2620M FSA2619M FSA2510 FSA2719P MONOLITHIC DIODE ARRAYS FSA2619M FSA2566P
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E I D bSO liaO 0037007 Ô | T-43-2 4 Monolithic Diode Arrays Plastic - Ceramic - Metal Packages Device No. Package No. Configuration V rhm V Min FSA2510M TO-116-2 M16S 60 FSA2510P M 16S TO-116 *rr ns Max Test Cond. Proci

diode 8008

Abstract: TH-C1725-P TH1725
Contextual Info: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

TH-C1725-R

Contextual Info: TH-C1725-R n I TH-C1730-R(n) ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAYS DESCRIPTION The TH-C17XX-R(n) products are based upon highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm

THOMSON-CSF Power Laser diode

Abstract: TH-C1730-S
Contextual Info: TH-C1725-S / TH-C1730-S CONDUCTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone

THOMSON-CSF Power Laser diode

Abstract: CW Laser TH-C1730-P TH-C1725-P
Contextual Info: TH-C1725-P / TH-C1730-P ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone

Contextual Info: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing