MK41H80 Search Results

H80N

Abstract: H80N-25 22-PIN mk41h
Contextual Info: rZZ SGS-THOMSON “ 7# [MO Mmi(gTr[fS «S MK41H80(N -20/22/25/35 4K x 4 CMOS TAG RAM . 4K x 4 SRAM WITH ONBOARD 4 BIT COM PA­ RATOR • 2 0 ,2 2 ,2 5 , AND 35ns ADD RESS TO COMPARE ACCESS TIME ■ EQUAL ACCESS, READ AND W RITE CYCLE TIMES ■ FLASH CLEAR FUNCTION

MK41H80N-20

Abstract: MK41H80N-25 MK41H80N-35 MK41H80P-20 MK41H80P-25 MK41H80P-35 MOSTEK
Contextual Info: z ssn MK41H80 I\I/P 2 0 / 2 5 /3 5 4K 4 CMOS TAG RAM MEMORY CO M PO NENTS P R E L IM IN A R Y FEATURES □ 4K x 4 SRAM with onboard 4 bit Comparator □ 20, 25, and 35ns Address to Compare Access Time □ 12,15, and 20 ns Tag Data to Compare Access Time □ Equal Access, Read and Write Cycle Times

d2764c

Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

K4505

Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Contextual Info: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4

MK41S80

Contextual Info: S = 7 SGS-THOMSON H i « ! MK41S80 VERY FAST CMOS 4K x 4 CACHE TAGRAM - 4K x 4 FAST HCMOS CACHE TAGRAM • ADDRESS TO COMPARE ACCESS TIMES: 10,12,15,20,25ns ■ FLASH CLEAR FUNCTION ■ 22-PIN 300 MIL PLASTIC DIP 24-PIN 300 MIL SOJ ■ APPLICATIONS: HIGH SPEED 32-BIT

Contextual Info: Data Sheet March 1992 , s AT&T Microelectronics ATT7C180 ATT7C181 High-Speed CMOS SRAM 16 Kbits 4K x 4 , Cache-Tag Features • High-speed address-to-MATCH — 10 ns max­ imum access time ■ Data retention at 2 V for battery backup operation ■ Totem-pole (ATT7C180) oropen-drain

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Contextual Info: / I T S C S -T H O M S O N g [LiOT iOûS M K 4 1S 8 0 VERY FAST CMOS 4K x 4 CACHE TAG RAM • 4K x 4 FAST HCMOS CACHE TAGRAM ■ ADDRESS TO COMPARE ACCESS TIMES: 10,12,15,20,25ns ■ FLASH CLEAR FUNCTION - 22-PIN 300 MIL PLASTIC DIP 24-PIN 300 MIL SOJ ■ APPLICATIONS: HIGH SPEED 32-BIT

2102 Static RAM

Abstract: L7C161PC
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTGS 00G107S G ■ -0 ? 4K x 4 CMOS Cache-Tag Static RAM FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

Contextual Info: MOTOROLA • i S E M IC O N D U C T O R TECHNICAL DATA MCM 4180 Product Preview 4 K x 4 Bit C a c h e A d d re ss Tag C o m p a rato r The MCM4180 is a 16,384 bit cache address tag comparator organized as 4096 tags of 4 bits, fabricated using Motorola's second generation high-performance silicon-gate C M O S

MCM4180J22

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM4180 4K x 4 Bit Cache Address Tag Com parator The MCM4180 is a 16,384 bit cache address tag comparator organized as 4096 tags of 4 bits, fabricated using Motorola's high-performance silicon-gate CMOS technology. The de­

Contextual Info: MK41 H80 N -20/22/25/35 SGS-THOMSON 4K x 4 CMOS TAG RAM 4K x 4 SRAM WITH ONBOARD 4 BIT COMPA­ RATOR 20,22,25, AND 35ns ADDRESS TO COMPARE ACCESS TIME EQUAL ACCESS, READ AND WRITE CYCLE TIMES FLASH CLEAR FUNCTION 22-PIN, 300 MIL PLASTIC N D IP -2 2 (Plastic Package)

MK41H80N-20

Abstract: tagram MK41H80N-25 MK41H80N-35 MK41H80P-20 MK41H80P-25 MK41H80P-35 thomson side brazed ceramic MOSTEK
Contextual Info: 4K 4 CMOS TAGRAM MEMORY COM PONENTS FEATURES \ □ 20, 25, and 35ns Address to C om p a re A ccess Tim e A, 1 c □ 22 < o o □ 4K x 4 SR AM w ith onboard 4 bit C om parator □ 12,15, and 20 ns Tag Data to C om pare Access Tim e *5 2 c □ 21 *3 A* 3 c □ 20

Contextual Info: ATT7C180 ATT7C181 High-Speed CMOS SRAM 16 Kbits 4K X 4 Cache-Tag Features • 4K by 4-bit static RAM with 4-bit tag comparison logic ■ Totem-pole (ATT7C180) or open-drain (ATT7C181) MATCH output ■ Automatic powerdown during long cycles ■ Data retention at 2 V for battery backup

L7C180

Abstract: SSL4180
Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Flash Clear □ Auto-Powerdown Design

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ DESCRIPTION _ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Hash Gear

MK41S80

Contextual Info: £ÿj SGS-THOMSON ÄitmiCTiQiOÜS MK41S80 VERY FAST CMOS 4K x 4 CACHE TAGRAM • 4K x 4 FAST HCMOS CACHE TAGRAM ■ ADDRESS TO COMPARE ACCESS TIMES: 10,12,15,20,25ns ■ FLASH CLEAR FUNCTION ■ 22-PIN 300 MIL PLASTIC DIP 24-PIN 300 MIL SOJ * APPLICATIONS: HIGH SPEED 32-BIT

MB81C68

Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl
Contextual Info: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8

tag 8833

Abstract: ci 7495 pin diagram of ic 7495 automatic change over contactor circuit diagram Internal diagram of ic 7495 and10d ssl4180 CONTACTOR AUTOMATIC CHANGE OVER LINE DIAGRAM
Contextual Info: AT&T Advance Data Sheet ATT7C180 A TT7C 181 High-Speed CMOS SRAM 16 Kbits 4K x 4 Cache-Tag F ea tu res • 4K by 4-bit static RAM with 4-bit tag comparison logic Totem-pole (ATT7C180) or open-drain (ATT7C181) MATCH output ■ Automatic powerdown during long cycles