MGFC44V Search Results

MGFC44V4450

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

MGFC44V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5.9 ~ 6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC44V6472

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V6472 6.4 ~ 7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

3642G

Abstract: MGFC44V3642
Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2

Contextual Info: < C band internally matched power GaAs FET > MGFC44V6472 6.4 – 7.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC44V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5 .9 —6 .4G H z BAND 2 4 W IN TERN A LLY MATCHED GaAs F E T DESCRIPTION OUTLINE DRAW ING The M G F C 4 4 V 5 9 6 4 is an in te rn a lly impedance-matched Unit: millimeters inches GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4

MGFC44V3436

Abstract: power amplifier 5 ghz
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

F236

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

60Ghz

Abstract: MGFC44V3436
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC44V3642

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3642 3.6 ~ 4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

47GHz

Abstract: MGFC44V4450 ADQ44 FET 355
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V4440 is an internally impedence matched GaAs power FET especially designed for use in 4.4 ~ 5.0 OUTLINE DRAWING Unit:millimeters GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V6472 6.4 – 7.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10