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    MGFC44V3642 Search Results

    MGFC44V3642 Datasheets (2)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MGFC44V3642
    Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF 235.56KB 3
    MGFC44V3642
    Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF 80.41KB 2

    MGFC44V3642 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc44v3642-42dbc PDF

    3642G

    Abstract: MGFC44V3642
    Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2


    OCR Scan
    mgfc44v3642-42dbcdigita2790ghz+325degdec-983642g PDF

    MGFC44V3642

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3642 3.6 ~ 4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original
    mgfc44v3642 PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc44v3642-42dbc PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


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    mgf1302mgf1303bmgf1323mgf14+15mgf1412bmgf1403bmgf1423bmgf1425bmgf1902bmgf1903bmgf4919gmgf4919mgf0907b14512hmgf4316gmgfc45v2527mgf1923mgfc38v3642mgf0904a PDF