MGFC44V3436 Search Results

MGFC44V3436 Datasheets (1)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC44V3436		Mitsubishi	3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET	Original	PDF	18.71KB	1

MGFC44V3436 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic	OCR Scan	mgfc44v3436 fc44v3436 -45dbc 120ma	PDF
MGFC44V3436 Abstract: power amplifier 5 ghz Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc 25deg power amplifier 5 ghz	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc	PDF
C 34 F Abstract: MGFC44V3436 GAAS FET AMPLIFIER f 10Mhz to 2 GHz Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc 120ma item-51 +310mhz c 34 f gaas fet amplifier f 10mhz to 2 ghz	PDF
F236 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc 25deg june/2004 +1f236	PDF
60Ghz Abstract: MGFC44V3436 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc44v3436 -45dbc 25deg 60ghz	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF