MGF4416D Search Results

MGF4918D

Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Contextual Info: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series I SUPER LOW NOISE InGaAs HEMT i DESCRIPTION The M G F 4 4 1 0D series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

4410D

Abstract: F4410D
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-

gD 679 transistor

Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic