MG50J1 Search Results

Contextual Info: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)

1ZS40

Abstract: ft05d
Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.

2-33F1A

Abstract: MG50J1BS11 253H tcp 8005 CS630
Contextual Info: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)

Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage

igbt toshiba mg

Abstract: MG50J1ZS40 ZS40
Contextual Info: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)

MG50J1BS11

Contextual Info: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

TOSHIBA IGBT

Contextual Info: TOSHIBA MG50J1BS11 TOSHIBA GTR MODULE M SILICON N CHANNEL IGBT r: ^ n 1 1 R <; 1 1 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed tf—1 . 0 / ' S Max. (Içj —5 0 A) Low Saturation Voltage : V cE(sat) = 2*7V (Max.) (Iq = 50A)

050 diode

Abstract: MG50J1ZS40 2-94D2A
Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs Max. trr = 0.15µs (Max.) Low saturation voltage : VCE(sat) = 3.5V (Max.)

Contextual Info: TOSHIBA MG50J1ZS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G 5 0 J 1 ZS40 H IGH P O W E R SW IT C H IN G APPLICATIO N S. U n it in mm M O T O R C O N T R O L APPLICATIO N S. B2 2 -FAST-O N -TAB 2- • H igh In p u t Impedance • H ig h s p e e d

MG50J1ZS40

Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE(sat) = 3.5V (max)

Contextual Info: MG50J1ZS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S . • • • H igh In p ut Im pedance H igh Speed : tf= 0.35//s M ax. trr = 0.15//S (Max.) Low S aturation Voltage • • Enhancem ent-M ode

MG50J1ZS40

Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE(sat) = 3.5V (max) Enhancement-mode

Contextual Info: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)

Contextual Info: TO SHIBA MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 50A)

Contextual Info: MG50J1ZS40 TOSHIBA TOSHIBA GTR MODULE M r ; ^ n SILICON N CHANNEL IGBT 1 1 7 < ; z i n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed ; tf—0.35/^s Max. trr = 0.15^8 (Max.) • Low Saturation Voltage

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

MG50Q6ES41

Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種