diode BYW 85
Abstract: BYW89 diodes byw 86 diode BYW 60 N5626 diode BYW 200 813BB diode BYW BYW 89 BYW 90
Contextual Info: BYW 82 STBYW 86 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power re ctifie r Besondere Merkmale: Features: • Kontrolliertes- Avalancheverhalten • H erm etische Glaspassivierung • G ute W ärm eableitung über die
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diode byx
Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
Contextual Info: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die
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Diode BYW 56
Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Contextual Info: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung
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BU226
Abstract: transistor bu 226 w 4b 139 NPN transistor TO-3
Contextual Info: Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendung: H orizontal-Ablenk-Endstufen in Schwarz-W eiß-Fernsehgeräten Application: H orizontal d e flection circu its in b la ck and white TV-receivers Besondere Merkmale:
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BYV16
Abstract: BYV 200v BYW 56 V BYV12
Contextual Info: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode
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BYV12
BYV16
BYV16
BYV 200v
BYW 56 V
BYV12
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microsemi TVS
Abstract: MicroNote
Contextual Info: MicroNote Series 118 by Mel Clark and Kent Walters, Microsemi Scottsdale TVS/Chip Product Overview Microsemi’s offerings of TVS chip size products include: TVS/Chip Passivated TVS/Chip types of: a planar, b) mesa and c) bidirectional mesa are illustrated
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BYW74
Abstract: 175aa byw76
Contextual Info: BYW 72 £8 BYW 76 'W Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z.B. für zeilenfrequenten Betrieb im Fern sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode
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Contextual Info: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure
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1C6622
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byw 36 v
Abstract: BYW32 byw 32 BYW 200 TU300 byw+36+v
Contextual Info: w ► BYW 32 Ì? BYW 36 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: S ch n e lle r G le ic h ric h te r und S ch a lte r z. B. fü r zeilenfreq uen ten B etrieb im F e rn sehgerät und Schaltnetzteile. Applications: Fast re ctifie r and sw itch for exam ple for TV-line output circuits and sw itch m ode
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chip bonding die
Abstract: MIL-STD-750 method 2073
Contextual Info: Introduction General Semiconductor Industries, Inc. offers a complete line of TransZorb * transient voltage suppressor semiconductor chips in die and cell construction, utilizing mesa and planar processing. Chips are available in unidirectional and bidirectional polarity, voltages ranging
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MIL-STD-750,
8/20JJ
037Die
chip bonding die
MIL-STD-750 method 2073
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1C5552
Contextual Info: 1C5552 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4312, REV- STANDARD RECOVERY SILICON RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glasspassivated Epitaxial Diode with Mesa Structure
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1C5552
1C5552
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AZ100ELT20
Abstract: ESD process
Contextual Info: ARIZONA MICROTEK, INC. 1630 S. Stapley Dr., Suite 125, Mesa, AZ 85204 +1 480 962-5881 FAX +1(480) 890-2541 www.azmicrotek.com PRODUCT CHANGE NOTIFICATION PCN NUMBER: 022503 DATE: 23 July 2003 SUBJECT: AZM CHANGE NOTIFICATION REGARDING AZ10/100ELT20X (die)
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AZ10/100ELT20X
AZ100ELT20,
-16VT,
AZ100ELT20
ESD process
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CPD15
Abstract: mesa die
Contextual Info: PROCESS CPD15 Central Ultra Fast Rectifier TM Semiconductor Corp. 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization
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CPD15
500mA
CBRHDU-02
19-September
CPD15
mesa die
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1N4933
Abstract: 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M CPD24
Contextual Info: PROCESS CPD24 Central Fast Recovery Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization
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CPD24
1N4933
1N4937
1N4942
1N4948
1N5615
1N5623
CMR1F-02M
1N4937
1N4948
1N5623
CPD24
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1N5185
Abstract: 1N5188 1N5415 1N5420 CPD25
Contextual Info: Central PROCESS TM Semiconductor Corp. CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization
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CPD25
1N5185
1N5188
1N5415
1N5420
1N5188
1N5420
CPD25
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1N5400
Abstract: 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 CPD06
Contextual Info: PROCESS CPD06 Central General Purpose Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization
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CPD06
1N5400
1N5408
1N5550
1N5554
1N5624
1N5627
CMR3-02
1N5408
1N5554
1N5627
CPD06
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1N5806
Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
Contextual Info: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization
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CPD17
1N5802
1N5806
UES1101
UES1106
CMR3U-01
19-September
1N5806
mesa die
CPD17
UES1106
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1N5811
Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
19-September
1N5811
CPD18
UES1306
UES1403
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1N645
Abstract: 1N649 CBRHD-02 CPD04
Contextual Info: PROCESS CPD04 Central General Purpose Rectifier TM Semiconductor Corp. 500 mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization
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CPD04
1N645
1N649
CBRHD-02
435-18Rectifier
1N649
CPD04
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1N4007
Abstract: 1n5614 1N5622 1N4007 details 1n5062 equivalent 1N3611 1N3614 1N4001 1N4245 1N4249
Contextual Info: PROCESS CPD05 Central General Purpose Rectifier TM Semiconductor Corp. 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization
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CPD05
1N3611
1N3614
1N4001
1N4007
1N4245
1N4249
1N5059
1N5062
1N5391
1N4007
1n5614
1N5622
1N4007 details
1n5062 equivalent
1N3614
1N4249
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CMR1U-01
Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
Contextual Info: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization
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CPD16
UES1001
UES1003
UF4001
UF4007
CMR1U-01
CMR1U-01M
19-September
CPD16
UES1003
UF4007
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CPD07
Contextual Info: PROCESS CPD07 Central General Purpose Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization
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CPD07
16-September
CPD07
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UES1106
Abstract: data sheet 1N5806 1N5802 1N5806 CMR3U-01 CPD17 UES1101
Contextual Info: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization
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CPD17
1N5802
1N5806
UES1101
UES1106
CMR3U-01
24-August
UES1106
data sheet 1N5806
1N5806
CPD17
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UF4007
Abstract: uf4007 diode data sheet diode uf4007 CMR1U-01 CMR1U-01M CPD16 UES1001 UES1003
Contextual Info: PROCESS CPD16 Ultra Fast Rectifier 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization
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CPD16
UES1001
UES1003
UF4001
UF4007
CMR1U-01
CMR1U-01M
24-August
631assivated
UF4007
uf4007 diode data sheet
diode uf4007
CPD16
UES1003
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