UES1101 Search Results

BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Contextual Info: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.

BYV27

Abstract: BYV27-100 UES1101 BYV27-150 BYV27-50 UESI102 UES1103 BYV-27-100
Contextual Info: RECTIFIERS UES1101 üES1102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

BKC Semiconductors

Abstract: DSAIH0002563 UES1101
Contextual Info: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

UES1102

Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors
Contextual Info: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru Applications UES1103 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are irnportant. They ar$ i# a i tor use in industrial, aircraft or satellite p d v^ ^ yj^ lies.

Contextual Info: UES1101 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0

BKC Semiconductors

Contextual Info: 2.5 Amp Voidless Fast UES1101 Switching Rectifiers thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

UES1101SM

Contextual Info: SURFACE MOUNT RECTIFIERS UES1101SM UES1102SM UES1103SM High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1101SM series is specifically designed for surface mount applications when board space and surface

Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE Ï F | i 3 4 7 c t,3 0011370 D 92D CORP 11378 UES1101SM UES1102SM UES1103SM 7 -6 ì - 17 SURFACE MOUNT RECTIFIERS High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES1 101SM series is

ZENER A25

Contextual Info: ISCFdÈÕ T Õ T( text/html About News Contact keyword search: UES1101SM (#16634 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 50 V Max Forward Surge Current

Contextual Info: DIGITRON SEMICONDUCTORS UES1101 – UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at 8.3ms

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

1N5806

Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Contextual Info: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are

UES1102

Abstract: unitrode BYV27-100 BYV27-150 UES1101 UES1101-UES1103 UES1103 BYV27 BYV27-50 UES1100
Contextual Info: RECTIFIERS BYV27-50 BYV27-100 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •