UES1103 Search Results

BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Contextual Info: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.

Contextual Info: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

BYV27

Abstract: BYV27-100 UES1101 BYV27-150 BYV27-50 UESI102 UES1103 BYV-27-100
Contextual Info: RECTIFIERS UES1101 üES1102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

BKC Semiconductors

Abstract: DSAIH0002563 UES1101
Contextual Info: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

UES1102

Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors
Contextual Info: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru Applications UES1103 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are irnportant. They ar$ i# a i tor use in industrial, aircraft or satellite p d v^ ^ yj^ lies.

Contextual Info: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are

UES1103SM

Contextual Info: ISCFdÈOjAXOjAX text/html About News Contact keyword search: UES1103SM #16638 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 150 V Max Forward Surge Current

BKC Semiconductors

Contextual Info: 2.5 Amp Voidless Fast UES1101 Switching Rectifiers thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

UES1101SM

Contextual Info: SURFACE MOUNT RECTIFIERS UES1101SM UES1102SM UES1103SM High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1101SM series is specifically designed for surface mount applications when board space and surface

Contextual Info: UES1103 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0

Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE Ï F | i 3 4 7 c t,3 0011370 D 92D CORP 11378 UES1101SM UES1102SM UES1103SM 7 -6 ì - 17 SURFACE MOUNT RECTIFIERS High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES1 101SM series is

Contextual Info: DIGITRON SEMICONDUCTORS UES1101 – UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at 8.3ms

BYV27-100

Abstract: BYV27-150 BYV27-50 UES1101 BYV27 UES1102 UES1103 UES1100
Contextual Info: BYV27-50 BYV27-100 BYV27-150 RECTIFIERS High Efficiency, 2.5A U ESI 101 U ESI 102 UES1103 FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

Contextual Info: ^ discrete devices jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 RECTIFIERS High Efficiency, 2.5A ELECTRICAL SPECIFICATIONS Maximum Forward Voltage @ Maximum Reverse Current @ ,975V UES1102 UES1103 10 0V @ 2A @ 2A 1 5 0V tp = 3 0 0 jiS tp = 3 0 0nS 11

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

8603

Abstract: JANS1N5806US JANTXV1N5806 JANTX1N5806 JANS1n5806
Contextual Info: Microsemi Ultra Fast Rectifiers i Microsemi Division Type Package Outline v : , 13 A A A SQ. MELF A A S Q . MELF A A S Q . MELF A A S Q . MELF A A SQ. MELF A A SQ. MELF POWERMITE E E SQ. MELF E SQ . MELF E E S Q . MELF E E SQ. MELF A DO-201 AD DO-215AA DO-214BA

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

UES1102

Abstract: unitrode BYV27-100 BYV27-150 UES1101 UES1101-UES1103 UES1103 BYV27 BYV27-50 UES1100
Contextual Info: RECTIFIERS BYV27-50 BYV27-100 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast