UES1001 Search Results

1001-UES1003

Contextual Info: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast

Contextual Info: UNITRO DE CORP 9347963 T2 U NITRODE DE | T 3 4 7 cît.3 00113713 L. 92D CORP 11376 D UES1001SM UES1002SM UES1003SM SURFACE MOUNT RECTIFIERS High Efficiency, 2 A r. ùj - FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES10Q 1SM series Is

DL-41 package

Contextual Info: Micmsemi Ultra Fast Rectifiers 1N4532 UES1001 UF105 UF105SM UFS105G UFS105J DLSF11 ER1A ES1A SF11 UF4001 UF4001GP UES1002 UF110 UF110SM UFS110G UFS110J DLSF12 ER1B ES1B SF12 UF4002 UF4002GP UES1003 UF115 UF115SM UFS115G UFS115J DLSF13 DLSF14 ER1C ES1C SF13

BKC Semiconductors

Contextual Info: 1.0 Amp Voidless Fast UES1001 Switching Rectifiers thru UES1003 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

T02SA

Abstract: BKC Semiconductors UES1001 UES1002 UES1003
Contextual Info: 1.0 Amp Voidless Fast Applications Switching Rectifiers UES1001 thru UES1003 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

DO-213AB

Abstract: UES1001 UES1002 UES1003 BKC Semiconductors
Contextual Info: 1.0 Amp Voidless Fast Applications Switching Rectifiers UES1001 thru UES1003 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important They are ideai for use in industriai, aircraft or satellite power supplier.

S1001

Abstract: UES1001 UES1002 UES1003
Contextual Info: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES DESCRIPTION • Very Fast Recovery Times • Very Low Forward Voltage An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

Contextual Info: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast

Genarator

Abstract: UES1001 UES1002 UES1003
Contextual Info: UES1001-UES1003 RECTIFIERS High Efficiency, 1A FEATURES • • • • DESCRIPTION Very Fast Recovery Times Very Low Forward Voltage Small Size Convenient Package An axial leaded power rectifier useful in many sw itching applications. Particularly suited where very fast

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MAX654

Abstract: 6860-07 MAX655 IN5818 diode IR 4110 MOSFET FP MAX656CPD MAX654-659
Contextual Info: y n y j x i y i / i L o w V o ltag e Step-U p DC-DC C onverters _ Features 4 +5V at 170mA from a Single-Cell Battery 4 Guaranteed Start-Up at 1.15V 4 Minimum Component Count The performance characteristics of each device are listed in the following table. The MAX654/656/657 are

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: QOh a r r i s u i sem iconductor IC L 7 6 4 4 , IC L 7 6 4 5 IC L 7 6 4 6 , IC L 7 6 4 7 May 1992 Low Voltage Step-Up Converters Features Description • +5V at 40mA From a 1.5V Source The ICL7644, ICL7645 and ICL7646 are low power fixed +5V output step-up DC-DC converters designed for

Caddell-Burns 6860

Abstract: MAX654CPD MAX656 MAX656CPD IN5818 diode IR 4110 MOSFET FP MAX655 MAX654 6860-07 high efficiency current mode flyback converter
Contextual Info: _ The performance characteristics of each device are listed in the following table. The MAX654/656/657 are optimized for single-cell input, while the MAX655/658/659 work best with two series alkaline or NiCad cells, or one lithium celt. The MAX654/665/657/659 contain an inter­

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

CMR1U-01

Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
Contextual Info: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization

hp ms 7647

Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
Contextual Info: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

CMR1U-01M

Abstract: UF4007 CMR1U-01 CPD16 UES1001 UES1003
Contextual Info: PROCESS CPD16 Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization