MCM21 Search Results

lp450

Contextual Info: MCM2102A L/L2/L4 MCM2102A P/P2/P4 Product Preview MOS 10 24-B IT S T A T IC R A N D O M ACCESS M E M O R Y N -C H A N N E L , S IL IC O N - G A T E , D E P L E T IO N L O A D T h e M C M 2 1 0 2 A is a 1 0 2 4 * b it ra n d o m access m e m o ry fa b ric a te d

NP324

Abstract: 4096-BIT block DIAGRAM OF random access memory "Random Access Memory"
Contextual Info: MCM2149 M OTOROLA Product Preview MOS N C H A N N E L . S I L I C O N G A T E 4096-BIT STATIC RANDOM ACCESS MEMORY 4096-B IT STATIC RANDOM ACCESS MEMORY The M CM 2149 is a 4096-bit random access m em ory fabricate d using H M O S , high perform ance M O S te chnolo gy. For ease o f use, the device

L15A

Abstract: MCM2125A
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A M O TO R O LA 1024 x 1 STATIC RAM MOS T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A fa m ilie s a re h ig h -s p e e d , 1024 w o r d s b y o n e -b it, ra n d o m -a c c e s s m e m o rie s fa b ric a te d u s in g H M O S , h ig h ­

6A17

Abstract: 3E-17 IC KA 2312
Contextual Info: M OTOROLA SC -CMEMORY/ASIC} öO DE^b3t.75Sl OOVSHTl 3 | T-46-23- 12 IT u C R r 1 2 1 2 8 ¿Jn 16K BIT STATIC RAM The MCM2128 is a 16,384-bit Static Random Access Memory organized as 2048 words by 8 bits, fabricated using Motorola's Highperformance silicon-gate MOS HMOS technology. It uses an in­

motorola dram

Abstract: 1MX16 MCM218160B
Contextual Info: Order this document by MCM218160BA2 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1MX16 — Advance information 16M CMOS Wide DRAM Family MCM218160B Fast Page Mode, 1M x 16, and 1K Refresh Fast Page Mode, 1024 Cycle Refr:~@.@. . . ih ‘!’: The family of 16M Dynamic RAMs is fabricated using 0,4p CMOS

MC7400

Abstract: MCM2102L1 MCM2102P
Contextual Info: MCM2102L/L1/L2 MCM2102P/P1/P2 1 0 2 4 - B IT S T A T I C R A N D O M MOS A C C ESS M EM O RY The M C M 2 1 0 2 is a 1024-bit random access m e m o ry fab ricated w ith high-density, high-reliability, N-channel, silicon-gate techno log y. F o r ease of use, the device operates fro m a single p ow er supply, is

ADI851

Contextual Info: M OTOROLA MCM2148 MOS N - C H A N N E L , S IL IC O N - G A T E 4096-BIT STATIC RANDOM ACCESS MEMORY T h e M C M 2 1 4 8 is a 4 0 9 6 -b it ra n d o m a c c e s s m e m o ry fa b ric a te d u s in g H M O S , h ig h p e r fo rm a n c e M O S te c h n o lo g y . F o re a s e o f use, th e d e v ic e

MCM2128

Abstract: 72402
Contextual Info: MCM2128 I 16K BIT STATIC RAM The MCM2128 is a 16,Wbit Static Random Access Memory organized as 2048 words by 8 bhs, fabricated using Motorola’s Highperformance silicon-gate MOS HMOS technology. It uses an innovative design approach which combines the ease-of-use features of

Contextual Info: M O T O R O LA 4096-BIT STATIC RANDOM ACCESS MEMORY The MCM2147 is a 4096-bit static random access m em ory organized as 4 096 words by 1-bit using M otorola's N-channel silicongate MOS technology. It uses a design approach w hich provides the simple tim in g features associated w ith fu lly static memories and

cm218

Abstract: MCM21
Contextual Info: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as

MC7400

Abstract: MCM2111 MC740
Contextual Info: MCM2111A L/L2/L4 MCM2U1A P/P2/P4 Advance Information MOS <N-CHANNEL, SI LIC O N -G A T E > 256 X 4-BIT STATIC RANDOM ACCESS MEMORY 256 X 4-BIT STATIC RANDOM ACCESS MEMORY The MCM2111A is a 256 x 4-bit random access memory fabri­ cated w ith high-density, high-reliability, N-channet, silicon-gate tech­

1024x1 static ram

Abstract: L15A L25A MCM2125A mcm2115a-45 2115A 530ns
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A MOTOROLA 1024x1 STATIC RAM M O S T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A f a m ili e s a r e h i g h - s p e e d , 1 0 2 4 w o r d s b y o n e - b it , ra n d o m -a c c e s s m e m o r ie s fa b r ic a te d p e r f o r m a n c e N - c h a n n e l s i li c o n - g a t e t e c h n o lo g y .

ADI-980-R1

Abstract: ansi h35 CERAMIC LEADLESS CHIP CARRIER H-35 MCM2167H ACS 711
Contextual Info: M MOTOROLA S E M IC O N D U C T O R S MCM2167H t S - 'S 3501 ED B LU ESTEIN BLVD., A U S T i N , T E X A S 78721 003283 Advance Information m o T MOS FAST 16K BIT STATIC RAM (N -C H A N N E L , S IL IC O N -G A T E ) The MCM2167H is a 16,384-bit Static Random Access M em ory orga­

S609

Abstract: sfhg MCM218165B 891lns
Contextual Info: Order this document MOTOROLA by MCM218165B/O SEMICONDUCTOR TECHNICAL DATA IMx16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refr~~:,. ,;,.’.,> , -.c~,.,. The family of 16M Dynamic RAMs is fabricated using 0.4w CMOS

Contextual Info: Order this document by MCM218160B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, 1M x 16, and 1K Refresh MCM218160B Fast Page Mode 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4 1 CMOS

555E

Contextual Info: Order this document by MCM218165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4|i CMOS high-speed silicon-gate process technology. It includes devices organized as

MCM2112

Abstract: MC7400
Contextual Info: MCM2112A L/L2 /L4 MCM2112A P/P2/P4 Advance Information MOS N -C H A N N E L , S IL IC O N •G A T E 256 x 4-BIT STATIC RANDOM ACCESS MEMORY 256 x 4-BIT STATIC RANDOM ACCESS MEMORY T he M C M 2 1 12 A is a 2 56 x 4 -b it random access m em o ry fabricated

cm218

Contextual Info: Order this document by MCM218160B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, 1M x 16, and 1K Refresh MCM218160B Fast Page Mode 1024 Cycle Refresh The fam ily of 16M Dynamic RAMs is fabricated using 0 .4 ^ CMOS

MCM2167H

Contextual Info: M O TO R O LA A d v a n c e Information MOS FA S T 16K B IT S T A T IC R A M N -C H A N N E L , S IL IC O N -G A T E The M CM 2167H is a 16,384-bit S ta tic Random Access M em o ry orga­ nized as 16,384 w o rd s by 1 bit, fabricated using M o to ro la 's H igh­

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: M O T O R O L A A d v a n c e Information MOS F A S T 16K B IT S T A T IC R A M N -C H A N N E L , S IL IC O N -G A T E T h e M C M 2 1 6 7 H is a 1 6 ,3 8 4 - b it S t a t i c R a n d o m A c c e s s M e m o r y o r g a ­ n iz e d as 1 6 ,3 8 4 w o rd s