6A17 Search Results

DW016

Abstract: d 1830 STR W 6262 TSP50C19 2506 power supply schematic gogo board UNL 2803 DAC 0804 dac 2113 0703 idle Sharp Semiconductor
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006B October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

ZXMP 6A17

Contextual Info: 6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed • Low Gate Drive 125mΩ @ VGS= -10V -4.3A • Low Input Capacitance -3.5A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: 6A17GQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed  Low Gate Drive 125mΩ @ VGS= -10V -4.3A  Low Input Capacitance -3.5A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: 6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = +25°C (Note 7) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V -2.4 A -60V Description This MOSFET has been designed to minimize the on-state resistance

ZXMP6A17N8

Abstract: 6A17
Contextual Info: A Product Line of Diodes Incorporated 6A17N8 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 125mΩ @ VGS = -10V -3.4A 190mΩ @ VGS = -4.5V -2.8A -60V Fast switching speed

ZXMP 6A17

Contextual Info: A Product Line of Diodes Incorporated 6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(on) ID TA = 25°C 125mΩ @ VGS= -10V -6.6A 190mΩ @ VGS= -4.5V -5.3A • Low on-resistance • Fast switching speed •

sumitomo g770

Abstract: SY56016 MIC69103 MIC44F18 0722L G770 sumitomo G770 MIC5318 MIC94069 MIC5232
Contextual Info: UNISEM MLF Lead Free Package Rel Data NiPdAu Plating - Green Compound Sumitomo G770 High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg MSL Soak Date Code SS # Reject Hrs. MIC94060 YML 3A23056MNF MLF1216D-4 L1 0610 76 1000 MIC5319 2.9YML

push pull power amplifier

Abstract: DW016 53K10 07AB str w 6252 0431 10K 16-PIN STR 6262 upd 2816 PIC 1607 lpc 2148 electrical specification
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006A MAY 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

6A17

Abstract: ZXMP6A17E6 ZXMP6A17E6TA
Contextual Info: A Product Line of Diodes Incorporated 6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V

6A17

Abstract: ZXMP 6A17 ZXMP6A17G ZXMP6A17GTA ZXMP
Contextual Info: A Product Line of Diodes Incorporated 6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V

Contextual Info: A Product Line of Diodes Incorporated 6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = 25C (Note 7) -60V 125m @ VGS = -10V -3.0 A 190m @ VGS = -4.5V -2.4 A

ZXMP 6A17

Abstract: 6A17 nc marking zxmp6a17
Contextual Info: 6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

c16aa

Contextual Info: 1 12314567897ABCD64E9F459F674D9A5 2C3 123452674 52689ABC47DA2ABD82E4F8CD94 2A299A4 4 1 1 1 79BBD84BAD4 2A94 DC4794 28694 234567428331 9ABC13CD1 EFFA1A1 3457428331 9ABC13C1 FFA1A19A197 A1 2!4"428381 9ABC13C#1

ZXMP 6A17

Abstract: 6A17 ZXMP6A17GTA ZXMP6A17GTC ZXMP6A17G
Contextual Info: 6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

SBR 2512

Abstract: str 6252 NEC 2561 SBR 1045 1015 STR 6053 S str w 6053 SHARP 1A04 mx 0541 b nec 2571 4 pin nec 2571
Contextual Info: MSP50x3x MixedĆSignal Processor User’s Guide 2000 Mixed-Signal Products SPSU006C IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

str 6252

Abstract: nec pc 2581 SBR 2512 MX 0541 NEC 2581 nec 2571 str w 6053 NEC 2561 STR 6053 nec upd 1511
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006B October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

6a17

Abstract: Diodes Incorporated 17-33 ZXMP 6A17 ZXMP6A17KTC ZXMP6A17K J-STD-020D ZXMP LINEAR MARKING date code
Contextual Info: A Product Line of Diodes Incorporated 6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C 125mΩ @ VGS= -10V -6.6A 190mΩ @ VGS= -4.5V

ZXMP 6A17

Contextual Info: A Product Line of Diodes Incorporated 6A17G ADV AN CE I N FORM AT I ON 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V

4BE67

Abstract: C356D E5 0D E7834
Contextual Info: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A

6a17 sot23-6

Abstract: 6A17 ZXMP6A17E6 ZXMP6A17E6TA ZXMP6A17E6TC
Contextual Info: 6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP6A17DN8

Abstract: ZXMP6A17DN8TA ZXMP6A17DN8TC
Contextual Info: 6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2A DESCRIPTION This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast

Contextual Info: ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = +25C 0.15Ω @ VGS = -10V -2.6A 0.23Ω @ VGS = -4.5V -1.5A -30V Description This MOSFET utilizes a unique structure that combines the benefits

K643

Abstract: 65A3 n373 276C 238e ts-w 307f K573 2732 memory chip motorola 5118 user manual ber 2a37 rX 433 N
Contextual Info: S19204CBI12 MEKONG Datasheet Rev 1.9 September 16, 2002 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC - Confidential and Proprietary Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products.

ZXMP 6A17

Contextual Info: A Product Line of Diodes Incorporated 6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Fast Switching Speed  Low Gate Drive 125m @ VGS= -10V -4.3A  Low Input Capacitance 190m @ VGS= -4.5V