ZXMP Search Results

ZXMP6A13FTA

Abstract: ZXMP6A13FT ZXMP6A13F
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications

ZXMP3A16DN8

Abstract: ZXMP3A16DN8TA ZXMP3A16DN8TC
Contextual Info: ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXMP3A17DN8

Abstract: ZXMP3A17DN8TA ZXMP3A17DN8TC
Contextual Info: ZXMP3A17DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

TS16949

Abstract: ZXMP3F37N8 ZXMP3F37N8TA
Contextual Info: ZXMP3F37N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.025 @ VGS=-10V -10.7 0.041 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for high

TS16949

Abstract: ZXMP3F36N8 ZXMP3F36N8TA
Contextual Info: ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance.

ZXMP7A17K

Abstract: ZXMP7A17KTC 7A17
Contextual Info: ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.16⍀ ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage

10A16

Abstract: ZXMP10A16K ZXMP10A16KTC BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS
Contextual Info: ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V BR DSS -100 RDS(on) (⍀) ID (A) 0.235 @ VGS= -10V 4.6 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

ZXMP10A18G

Abstract: ZXMP10A18GTA ZXMP10A18GTC
Contextual Info: ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP6A16K

Abstract: 6A16 TS16949 ZXMP6A16KTC
Contextual Info: ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.085 @ VGS= -10V 8.2 0.125 @ VGS= -4.5V 6.75 V(BR)DSS -60 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

ZXMP3A16GTA

Abstract: TS16949 ZXMP3A16G ZXMP3A16GTC
Contextual Info: ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

design ideas

Abstract: TS16949 ZXMP3F35N8 ZXMP3F35N8TA 3f35 PF6000
Contextual Info: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery

design ideas

Abstract: TS16949 ZXMP3F37N8 ZXMP3F37N8TA
Contextual Info: ZXMP3F37N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.025 @ VGS=-10V -10.7 0.041 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for high

design ideas

Abstract: TS16949 ZXMP3F36N8
Contextual Info: ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance.

Contextual Info: ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP3A16N8

Abstract: ZXMP3A16N8TA ZXMP3A16N8TC
Contextual Info: ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

10A18

Abstract: ZXMP ZXMP10A18
Contextual Info: A Product Line of Diodes Incorporated ZXMP10A18G ADVANCE INFORMATION 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 150mΩ @ VGS = -10V -3.7A 190mΩ @ VGS = -6V -3.3A • Low on-resistance

Contextual Info: ZXMP6A17GQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed  Low Gate Drive 125mΩ @ VGS= -10V -4.3A  Low Input Capacitance -3.5A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = +25°C (Note 7) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V -2.4 A -60V Description This MOSFET has been designed to minimize the on-state resistance

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

Contextual Info: ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) -100V 350mΩ @ VGS= -10V 450mΩ @ VGS= -6V ID TA = +25°C -1.6A -1.4A Description This MOSFET has been designed to minimize the on-state resistance • Fast Switching Speed

ZXMP6A17N8

Abstract: 6A17
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17N8 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 125mΩ @ VGS = -10V -3.4A 190mΩ @ VGS = -4.5V -2.8A -60V Fast switching speed

ZXMP3A13F

Abstract: ZXMP3A13FTA ZXMP3A13FTC ZXMP3A13
Contextual Info: ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

1A17

Abstract: ZXMP10A17E6 ZXMP10A17E6TA spice model ZXMP10A17E6TA DIODE MARKING CODE G SOT23 4.5V TO 100V INPUT REGULATOR
Contextual Info: A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V

Contextual Info: ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes