MBR20030CT Search Results

bys75-50

Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
Contextual Info: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT

MBR20030CTL

Abstract: MBR20025CTL R20025C
Contextual Info: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:

200CNQ035

Abstract: 200CNQ040 224CNQ035 224CNQ040 CPT20130 CPT20135 CPT20140 MBR20030CT MBR20035CT
Contextual Info: Schottky PowerMod CPT201 30 - CPT201 45 ¥ Baseplate A=Common Anode V Baseplate Common Cathode U I I H “ I- °N | N ° =1u, 1 1 "1 F 1 \ — r _L° t “ In ch es Min. A — B 0.700 Max. 3.630 0.800 c — 0.630 E 0.120 0.130 F 0.490 0.510 G 1.375 BSC

MBR20030CTL

Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

Contextual Info: Schottky PowerMod CPT20130 - CPT20145 A Dim. Inches R Min. G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C H V E Baseplate D=Doubler A B C E F G H N Q R U V W Max. 3.630 -0.800 0.700 0.630 -0.130 0.120 0.510 0.490 1.375 BSC -0.010 -0.290

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

PT2014

Abstract: 200CNQ035 200CNQ040 224CNQ035 224CNQ040 CPT20130 CPT20135 CPT20140 MBR20030CT MBR20035CT
Contextual Info: S c h o t t k y PowerMod CPT201 30 - CPT201 45 Dim. Inches ¥ Baseplate A=Common Anode V Baseplate Common Cathode U t~1 I t “1 / / I H “ I- \ ! F u \ , — r r - i Microsemi Catalog Num ber o-W—j —N-o 1 c FT Notes: Baseplate D=Doubler Min. A —

200CNQ035

Abstract: 200CNQ040 224CNQ035 224CNQ040 CPT20130 CPT20135 CPT20140 CPT20145 MBR20030CT MBR20035CT
Contextual Info: Schottky PowerMod CPT20130 - CPT20145 A Dim. Inches R Min. G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C H V E Baseplate D=Doubler A B C E F G H N Q R U V W Max. 3.630 -0.800 0.700 0.630 -0.130 0.120 0.510 0.490 1.375 BSC -0.010 -0.290

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

MBR20045CT

Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

MBR20020CT(R)

Abstract: Twin Tower 200100CT
Contextual Info: MBR 20020C T R DACO SEMICONDUCTOR CO., LTD. MBR 200100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Sto rage Temperatur: -55 C to +150

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

MBR200100CT

Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
Contextual Info: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

MBR60035CTL

Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL
Contextual Info: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection