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    MBR20040CTR Search Results

    MBR20040CTR Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBR20040CTR
    America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF 1.02MB 2
    MBR20040CTR
    GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 200A 2TOWER Original PDF 3
    MBR20040CTR
    America Semiconductor MBR20040 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF 249.55KB 1
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    MBR20040CTR Price and Stock

    Navitas Semiconductor

    Navitas Semiconductor MBR20040CTR

    - Bulk (Alt: MBR20040CTR)
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    Avnet Americas MBR20040CTR Bulk 10 Weeks 40
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    • 100 $107.77
    • 1000 $97.65
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    MBR20040CTR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+2mbr20040ct175se PDF

    MBR20020CT

    Abstract: MBR20030CT MBR20035CT MBR20040CT
    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    MBR20020CT

    Contextual Info: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF