MAX247 Search Results

STY112

Abstract: 112N65 STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

139N65M5

Abstract: STY139N65M5
Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω, 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY139N65M5 710 V < 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

STY140NS10

Abstract: Max247TM MAX247
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

STY140NS10

Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED ) s ( ct u d o DESCRIPTION Using the latest high voltage MESH OVERLAY™

Contextual Info: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDS @TjMAX RDS on max ID STY139N65M5 710 V 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

mosfet 4430

Abstract: 4430 MOSFET 600v 60a STY60NM60
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

100nF

Abstract: STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET Max247 Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

O247

Abstract: O-247 STY60NA20 STY60NA
Contextual Info: STY60NA20  N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

GY40NC60VD

Abstract: GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60
Contextual Info: STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STY100NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

GY40NC60VD

Abstract: STGY40NC60VD Welding topologies MAX247 GY40N
Contextual Info: STGY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C STGY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

100NM60N

Abstract: STY100NM60N
Contextual Info: STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STY100NM60N 650 V < 0.029 Ω 98 A • 100% avalanche tested ■ Low input capacitance and gate charge

600V igbt dc to dc boost converter

Abstract: SCHEMATIC low watt POWER SUPPLY WITH IGBTS bi-directional switches IGBT hybrid vehicle power inverter tr4 surface mount Power INVERTER schematic circuit power architecture hybrid vehicles ALUMINIUM 6061 electronic ballast project automotive inverter dc link capacitor
Contextual Info: AN1597 APPLICATION NOTE HIGH CURRENT POWER MODULES FOR AUTOMOTIVE USING Max247 PACKAGE WITH IMS SUBSTRATE M. Melito 1. ABSTRACT Hybrid Electric Vehicles HEVs combine the internal combustion engine of a conventional vehicle with the battery and electric motor of an electric one. This combination offers the extended range and rapid

10S21

Abstract: LQG11AZN2500 Inductor choke AAAZ IC 5 PIN
Contextual Info: 19-1466; Rev 0; 6/99 ANUAL N KIT M EET IO T A U EVAL TA SH WS DA FOLLO 500MHz to 2500MHz VCO Buffer Amplifiers The MAX2472/MAX2473 are flexible, wideband, highreverse-isolation buffer amplifiers. The MAX2472 has dual open-collector outputs capable of delivering -5dBm into

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

130NF20D

Abstract: STY130NF20D VDD480
Contextual Info: STY130NF20D N-channel 200 V, 0.010 Ω, 130 A, Max247 STripFET II with fast recovery diode Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STY130NF20D 200 V < 0.012 Ω 130 A • Exceptional dv/dt capability ■ 100% avalanche tested Application

250v 60A mosfet

Abstract: Max247 Zener-Protected MDmeshTMPower STY60NM50
Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STY80NM60N

Abstract: 80nm60 JESD97
Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

STY105NM50N

Contextual Info: STY105NM50N N-channel 500 V, 0.018 Ω, 110 A, MDmesh II Power MOSFET in Max247 Preliminary data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) ■ 100% avalanche tested ■ Low input capacitance and gate charge

Contextual Info: STY60NA20 N - CHANNEL 200V - 0.030Q - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V dss R D S o n Id 200 V < 0 .0 32 Q 60 A • TYPICAL Rds(oh) = 0.030 Q m EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP . ± 30V GATE TO SOURCE VOLTAGE RATING