MARKING T46 Search Results

Diode LT 02

Abstract: ERB83-006 T460 T760 T930
Contextual Info: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.

SAB-C167CR-16FM

Abstract: C166 C167 C167CR-16FM
Contextual Info: Microcomputer Components Technical Support Group Munich HL MC AT 1 Errata Sheet November 28, 1997 / Release 1.1 Device : Stepping Code / Marking : SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC This errata sheet describes the functional problems known in this step. Problem

C166

Abstract: C167 C167CR C167CR-16FM SAB-C167CR-16FM
Contextual Info: Microcomputer Components Technical Support Group Munich HL MC AT 1 Errata Sheet May 6, 1997 / Release 1.0 Device : Stepping Code / Marking : SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC This errata sheet describes the functional problems known in this step. Problem

TSE 151

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications

b83006

Abstract: diode schottky b83006 B83-006 diode b83
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass

DIODE JS4

Abstract: ERA17 T460 JT MARKING MWRA t930 30S3 T151 T760 T810
Contextual Info: ERA17 1.0A : Outline Drawings GENERAL USE RECTIFIER DIODE • i t s : Features • S'J'32*fcK>, 5mm£y*- @ f t » A * ^ 8 6 Ultra small package, possible for 5mm pitch automatic insertion. • S ffJIS 'tt High reliability \ tjk : Marking ESD-proof * 7-=i-K : â

ACT46

Abstract: ACT351 C167 instruction set C16x Instruction Set Manual siemens C166 instruction set C166 C167 C167CR-16FM SAB-C167CR-16FM injection
Contextual Info: Microcontroller Components Errata Sheet October 9, 1998 / Release 1.2 Device: Stepping Code / Marking: Package: SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

ERC01

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE -wi Inn LJ 30 MIN. 7.5 30 min : Features • W ide voltage class • BGfSI&ii • Ü 7j\ : Marking High reliability ■ E I& : Applications * 5-u- K : É Color code : White •« » ¿ft General purpose rectifier applications

FAJ 40

Abstract: aba diode 15X15 SC017-2 SC017-4 T460 r930 Diode FAJ ABA SURFACE MOUNT T3B diode
Contextual Info: S C O I 7 1 .OA : Outline Drawings GENERAL USE RECTIFIER DIODE * Features • 04 it ' J ESD-Proof I 12*“ m Surface m ount device i/jv : Marking High reliability •Applications Be General purpose rectifier applications □ □ » A utom obile use t>'J —h'7-ÿ

RA83

Abstract: E130L ERA83-004 T151 T460
Contextual Info: ERA83-004 ia : Outline Drawings I '> a ^ + - / < iJ 7 r y - f * - K SCH O TTKY BARRIER DIODE I # « : Features »ifeV F : Marking Low V f S uper high speed switching. SfEnfe : Ö ••7\'— ►► ► ►► 4 0 1 High reliability by planer design. ►& 'J W

CCD GFT

Abstract: ERD31 SS53 40114 JD51
Contextual Info: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^

TR MARKING CODE K4N

Abstract: DIODE MARKING CODE K4N TTS-03
Contextual Info: E R A 1 7 I 1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M &fclfc, b m m & y ? § A#1 ' «TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking

Contextual Info: • h ÉidMiuiilBHááttaSflÉ BflE D MICRON TECHNOLOGY INC b llIS H T G G O E Tll =i ■ MRN ADVANCE ÉtaB*6â*ù^ÂeeÂfcâi - uMMüff T4C-2Z-/< 16K X 16 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS FEATURES • • • • OPTIONS MARKING « Timing

marking 2U 77 diode

Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Contextual Info: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1

Contextual Info: E R C 1 2 i . 2 A I Outline Drawings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q8 20MIN — : Features • •0— Hi gh surge current • 'J V£ M $ A • ffifflfitt ■ S/jv i Marking Compact size, lightweight

Contextual Info: M I CR ON T E C H N O L O G Y INC 3ÔE D blllSHT GQG2745 ? iMRN 64K X 1 SRAM SRAM FEATURES PIN ASSIGNMENT Top View -12 -15 -20 -25 -30 -35 > 1—1 MARKING • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access (A-6, B-6) OPTIONS

Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • tv— «fElîfe: Ù « ffi i -j afcfgfct e ►►►►► - ti'j—Fv-ÿ High reliability by planer design. • ' J ^ m m f

krc 118 048

Abstract: ZM02
Contextual Info: ADVANCE 2. 4 WIEG X 64 SDRAM DIMMs l^ iid R o r s i SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES OPTIONS (DE-9) 2 Meg x 64 TSO P (shown), (DE-10) 4 Meg x 64 TSOP, (DE-25) 2 Meg x 64 SOJ, (DE-26) 4 Meg x 64 SOJ Sm Tm Q pj MARKING • Components

CB903-4

Abstract: ML marking rft t-200
Contextual Info: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver

Contextual Info: E R C 8 4 - 0 9 I3 A • W & ’+Sfe : Outline Drawings *> a ' y Y * - ' < * ) T y 4 * - V SCHO TTKY BARRIER DIODE Features • 1&VF Low VF Marking W $z7j\ : A 7 “- a - Super high speed switching. K : » C o lo r c o d e : B l u e A b r id g e d High reliability by planer design.

ERD29

Abstract: F553 T151 T460 T810
Contextual Info: ERD29 2 .5A M B N 'iS : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current High voltage by mesa design, Ä 7 - 3 - K :« C o lo r c o d e : G re e n • f if f K H i High reliability .t y p e nam e V o lt a g e c la s s A D r ia g e a

Zentech

Abstract: air humidity HP4285 INDUCTOR DIP Mil-std
Contextual Info: Reliability test conditions Part 04/2003 EMC & Inductive Solutions Max- Eyth-Str. 1 D-t4638 Waldenburg SMD WE-PD – Series 74477xxx QS-Level: Standard: MIL-STD-202F Method 215 AQL Visual 0.25% Electrical(0.015%) Characteristic DC Resistance(Rdc) Performance

Contextual Info: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html