C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
|
Original
|
1n8211n4733a1n821a1n4734a+131n8231n4735a1n823ac5v6 phc18 phph c5v1philips diode ph 33dc8v2 phc10 phc4v7 phc5v1phc3v9phc33ph
|
PDF
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829aphilips diode ph 33dph c5v1philips diode ph 33mphilips diode ph 33jph 33dph33dph33g33g ph diodeph 33gphilips diode ph 37m
|
PDF
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1n58171n8211n58181n821a+111n5819philips diode ph 33dphilips diode ph 33jphilips diode ph 33mdiode c18 ph33g ph diodec18 pha6t sot23c33phph 33gt2d diode
|
PDF
|
marking JY sot-23
Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40
|
Original
|
sr520g-30od-723sr651h-40od-323+14sr521g-30bat54tot-416sr751g-40marking jy sot-23sot-23 marking 3dbat34lv4, smdsot-346sot-23 marking b1sr715fsmd23bat54 sot-323b4 sod-123
|
PDF
|
PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
|
OCR Scan
|
ot143ot323od123od323+15bzv49baw56wbsr402pb709arbaw56bsr41pxta14mark a7 sot23pmbz52227bmarking code m10 sot89dc/sot89 marking code 3d2pb710arbst60pmbta14pmbt4401
|
PDF
|
Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
|
Original
|
ot143ot323ot343ot363+16od110od323od523bf992pmbf4416abf510philips marking codedatasheets for bb132 varicapmarking code w1bat18 a2psot143 marking code a5marking codessot143 marking code a3marking a5 sot363marking w1s13 sot363
|
PDF
|
BSS159N
Abstract: E6327 SOT-23 marking j25 D007
Contextual Info: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N SOT-23 Q67042-S1488
|
Original
|
bss159not-23q67042-s1488e6327+2sot-23 marking j25d007
|
PDF
|
marking d007 sot23
Contextual Info: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N 0) SOT-23 Q62702-S1488
|
Original
|
bss159not-23q62702-s1488q67042-s4293+3e6327e6906marking d007 sot23
|
PDF
|
3 pin capacitor
Abstract: B41538-A7338-M S14 K 75 CAPACITOR B41538-A7228-M MARKING 11 3PIN
Contextual Info: Aluminum Electrolytic Capacitors 3-pin capacitor Long-life grade For switch-mode power supplies with high clock frequencies Very low self-inductance Very high current handling capability despite small size; high reliability 35 î 2V Marking ol negative pole
|
OCR Scan
|
b41538-a7228-mb41538-a7338-mb41538-a8228-mb41538-a8338-m+33 pin capacitors14 k 75 capacitormarking 11 3pin
|
PDF
|
s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
|
Original
|
od-123s30s20pts30s30pts30s35pt+10s10p40c53lss34 smass54 smbk4 sodsk24 equivalentsk34 smcdiode s14lssm14aptssm5819slpt
|
PDF
|
marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Contextual Info: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
|
Original
|
214ac-ss1550mvp-pmarking ss14+9ss14 do-214acss14marking ss15 smass14 smass15ss16ss12 markingss14 do-214ac smass13
|
PDF
|
|
Contextual Info: S14C03-8 THRU S14C24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0287, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S14C12-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
|
Original
|
s14c03-8s14c24-8n0287s14c12-8+1so-14
|
PDF
|
s10p40
Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK
|
Original
|
od-123s15p20s15p30s15p40+10s10p40scm54scm35sbm19scm84ssm19scm32ssm34sbm14ssm35
|
PDF
|
|
Contextual Info: DN4 Diode Termination Network / ESD Suppressor Schematic 4 3 1 2 Package SOT-143 Marking “ DN4 “ o Absolute Maximum Ratings: ( Ta = 25 C ) Symbol Parameter Value Units TJ Operating Temperature -40 to +85 C WV Supply Voltage 8 V IF DC Forward Current
|
Original
|
ot-143ot143 |
PDF
|
|
|
s149
Abstract: transistor Siemens 14 S S 92
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
|
OCR Scan
|
e6325ss149q62702-s623q67000-s252+2s149transistor siemens 14 s s 92
|
PDF
|
Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
|
Original
|
mt46h64m16lfmt46h32m32lf09005aef82ce3074elpida lpddr2 memory |
PDF
|
|
Contextual Info: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle
|
OCR Scan
|
mt4d232mt8d43272-pindd-11+10d13bbl
|
PDF
|
TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Contextual Info: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73
|
OCR Scan
|
do-351ss41do-341s2471+121ss131b100atzp27btzp33atzp 33azp 33atzp10azener 1n 4148957br 958bzener 56cmarking code s139
|
PDF
|
|
Contextual Info: - PRELIMINARYD ecem ber 1995 Edition 2.1 FUJITSU _ P R O D U C T P R O F IL E S H E E T : MB81G83222-010/-012/-015 CMOS 2 X 128K X 3 2 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY Marking side The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory
|
OCR Scan
|
mb81g83222-010/-012/-015072-words32-bitmb81g83222+3374175bmb81g83222-010mb81g83222-012
|
PDF
|
ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4
|
Original
|
256mbmt46h16m16lfmt46h8m32lf09005aef834bf85b+3elpida mobile dram lpddr2lpddr2 sdram microninfineon power cycling
|
PDF
|
34SH0200X
Abstract: 11099273 E315836 34SH0500X
Contextual Info: Inductive sensors IWRM 12I9704/S14X Inductive linear sensors dimension drawing 50 SW 17 35 M12 x 1 M12 x 1 general data photo mounting type quasi-flush measuring distance Sd 0 . 4 mm resolution repeat accuracy < 0,001 mm stat. < 0,005 mm (dynam.)
|
Original
|
12i9704/s14xe31583634sh0200x34sh0300x+734sh0500x34sh1000x34sh2000x33sh0200x33sh0500x33sh0600x11099273
|
PDF
|
|
Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0902 S14 E – 14 LEAD PLASTIC SOIC PACKAGE PACKAGE OUTLINES S14 (E) Package Outline Drawing
|
Original
|
|
PDF
|
|
Contextual Info: S14C03-8 thru S14C24-8 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1915, REV. - TVS ARRAY SERIES FEATURES ü ü ü ü ü ü SO-16 Protects 3.3, 5, 12, 15, 24 V Components Bidirectional Provides Electrically Isolated Protection 300 W @ 8/20 µs Protects 8 Lines
|
Original
|
s14c03-8s14c24-8so-14so-16+4s14cxx-8rs-232rs-422rs-423
|
PDF
|
|
Contextual Info: 140MHz SAW Filter 3.2MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S140A76 Part Number:LB Number:LBS140A76 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation
|
Original
|
140mhzlbs140a762002/95/ec |
PDF
|