MARKING L6 SOT Search Results
MARKING L6 SOT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MKZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-23 | Datasheet | ||
| MSZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-346 | Datasheet | ||
| MKZ24V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 24 V, SOT-23 | Datasheet | ||
| MSZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-346 | Datasheet | ||
| MKZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-23 | Datasheet |
MARKING L6 SOT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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L2SC1623QLT1G
Abstract: L2SC1623RLT1G L2SC1623SLT1G
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L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G L2SC1623QLT1G L2SC1623RLT1G L2SC1623SLT1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel |
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L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G | |
dra2143X
Abstract: sot-23 l6
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DRA2143X DRC2143X UL-94 DRA2143X0L SC-59A O-236ts. dra2143X sot-23 l6 | |
Q62702-A858Contextual Info: Silicon PIN Diode BAR 17 ● RF switch ● RF attenuator for frequencies above 1 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 17 L6 Q62702-A858 Pin Configuration Package1) |
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Q62702-A858 OT-23 Q62702-A858 | |
transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
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KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO: |
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OT-23 OT-23 2SC1623 100mA, | |
MARKING l7
Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
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OT-23-3L OT-23-3L 2SC1623 100mA, MARKING l7 sot-23 l6 2SC1623 transistor marking L6 MARKING L4 | |
KST1623L7Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage |
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KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 | |
hFE-200
Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
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OT-23 OT-23 2SC1623 100mA hFE-200 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) |
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OT-23 OT-23 2SC1623 100mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323 High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification 1. BASE |
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OT-323 2SC4177 2SA1611 100mA, | |
2SC1623 sot-23
Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
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2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7 | |
ATC700a
Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
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BLF2022-90; OT502A AN01001 ATC700a J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier | |
transistor mark l6Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature |
OCR Scan |
KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323 High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification 1. BASE |
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OT-323 2SC4177 2SA1611 | |
Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
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OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23 | |
L6 SOT-23
Abstract: marking code 20L SOT-23 BSS69R BSS69 BSS70R L6 sot 23 FMMT2369 BSS66 BSS70 BSS67
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OCR Scan |
BSS69 BSS70 BSS66 BSS67 OT-23 BSS69 BSS70 Collecto00/300 FMMT2222 L6 SOT-23 marking code 20L SOT-23 BSS69R BSS70R L6 sot 23 FMMT2369 | |
Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
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OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING | |
2SA1036K
Abstract: 2SC1623 2SC1623 sot-23 l6 sot23
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2SC1623 OT-23 02-Aug-06 02-Mar-06 OT-23 2SA1036K 2SC1623 2SC1623 sot-23 l6 sot23 | |
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Contextual Info: Product specification BAR17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 RF attenuator for frequencies above 1 MHz 0.55 RF switch 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low distortion factor +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 |
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BAR17 OT-23 | |
smd transistor marking l6
Abstract: marking L6 BAR17 smd transistor l6 sot-23 l6 smd sot23 marking l6 L6 SOT-23 l6 smd L6 smd transistor smd rf transistor marking
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BAR17 OT-23 smd transistor marking l6 marking L6 BAR17 smd transistor l6 sot-23 l6 smd sot23 marking l6 L6 SOT-23 l6 smd L6 smd transistor smd rf transistor marking | |
FMMT2222A
Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT2222A FMMT-A06 BCW33 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 |
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OT-323 OT-323 2SC4177 100mA, -10mA | |
NPN marking 8e
Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 NPN marking 8e FMMT2222A H9 sot 23 BCW33 | |