MARKING HW Search Results

TPU005

Abstract: CAPACITORS color code marking code avx label TPT/TPU069
Contextual Info: Power Ceramic Capacitors Marking - Packaging - Identification MARKING - Dielectric type identification for power capacitors only according to the table below: Each part is marked with the following indications: - Logo - Reference - Rated capacitance (EIA code)

s3030

Abstract: 4339 NS4101-AS01 R43392 7224 SAW 433.92
Contextual Info: SAW Resonator R43392 G Features 1-port Resonator Quartz Frequency Stabilization For transmitters or Local Oscillators Package Dimension – S3030 Pin Configuration 2 5 1, 3, 4, 6 Input Output Ground Marking Configuration ITF1 43392) 1) Manufacturer name 2) Marking Number

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

SMD MARKING code g

Abstract: smd marking 327 ABM7 ABRACON MARKING SMD MARKING CODE transistor smd zy smd marking code PH marking code WW SMD SMD MARKING code caa SMD MARKING CODE W ZY marking
Contextual Info: APPENDIX G - Standard Markings Standard Marking for Crystals Thru Hole and SMD package ABC2 ABSM2 Series Marking 1 XX.XXX ABC2 YYWW Example: 4.000MHz: 15th week, 2008: 4.000 ABC2 0815 14.31818MHz: 4th week, 2008: 14.318 ABC2 0804 CAA: Internal code YM: Year and Month

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

TE3112-PRINTER

Abstract: cable marker
Contextual Info: Introducing TE3112-Printer : Thermal Transfer Printer The TE3112-PRINTER is a high performance mid-range Identification printer for marking Heat-shrinkable Marker Sleeves, Cable Marker Tags and Labels. With a 300 dpi print head, it’s capable of marking a broad range of products for use in commercial and industrial environments.

capacitor 6.8 / 25

Abstract: MARKING CODE dipped polyester capacitors discharge capacitor welding gold capacitor gold cap industrial application of electric drives marking HW matsushita capacitor 0,1f matsushita aluminium capacitors alpha wire catalog
Contextual Info: DIGI-KEY Issue No. : 2004E001P Date of Issue : 5.Jan.2004 SPECIFICATION Product Description : Electric Double Layer Capacitor GOLD CAPACITOR HW Series Product Part Number : EECHW0D706 Country of Origin : Japan Marking of the Origin : Printed on the packing label

NT6SM32M16AG-S1

Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Lpddr2 Idd7

Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

flanges

Abstract: hwson 6pin
Contextual Info: 6PIN HWSON 4521 φ1 A B C φ2 TYPE CLASS label W UNIT: mm ITEM SYMBOL SIZE Diameter A φ 180 + −3 Space Between Flanges W 13 ± 0.5 Outer Diameter B φ 60±1 Flange Hub Marking Slit Location θ1 90º Spindle Diameter C φ 13±0.5 Key Slit Location θ2

Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage

D8541

Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage

Contextual Info: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

design ideas

Abstract: ZHCS400 TS16949
Contextual Info: ZHCS400 SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” FEATURES PINOUT - TOP VIEW • Low VF SOD323 • High current capability • Miniature surface mount package APPLICATIONS • DC - DC converters • Mobile telecomms • PCMCIA DEVICE MARKING

Lpddr2 Idd7

Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
Contextual Info: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

NTC 200-9

Abstract: a2240 128M16 A1930 NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

marking d9

Abstract: marking D9 diode ADS5282 TI QFN marking transistor marking D9 ADS5281 ADS5287 QFN-64 dALLAS MARKING CODE pnaz5
Contextual Info: ADS5281, ADS5282, and ADS5287 Errata SBAZ006B – MARCH 2006 – Revised OCTOBER 2007 Errata to ADS528x, Data Sheet Literature Number SBAS397 Revision Identification Figure 1 explains the ADS528x package marking for both the HTQFP-80 and QFN-64 packages for the

Contextual Info: Features • Up to 7.5W CW output power from a 200um 0.22NA core fiber. • High Quality, Reliability, and Performance Applications • Solid State Pumping • Laser Marking Product Specifications 808nm Multi-Mode High-Heat-Load Modules w/ Fiber Description:

lpddr2 256mb

Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

Contextual Info: A COMPANY OF MODEL IMC-1210 Inductors Surface Mount, Molded FEATURES • Molded construction provides superior strength and moisture resistance •Tape and reel packaging for automatic handling, 2000/reel, EIA481 • Printed marking • Compatible with vapor phase and infra-red

80C166

Abstract: C166 P-BQFP-100 80C166/83C166
Contextual Info: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB PD/AT 2 Errata Sheet October 16, 1995 / Release 1.3 Device : Stepping Code / Marking : SAB 80C166/83C166 - S SAB 80C166/83C166 - S - T3 SAB 80C166/83C166 - M SAB 80C166/83C166 - M - T3

A1930

Contextual Info: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle