MARKING CODES TRANSISTORS Search Results

marking code C1L

Abstract: marking c1l CMPT6429 CMPT6428 Marking codes
Contextual Info: Central CMPT6428 CMPT6429 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6428, CMPT6429 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications.

marking 6k sot-23 package

Abstract: 6K SOT23 marking codes transistors sot 6k CMPF4393 CMPF4391 CMPF4392 marking 6J 6j marking 6k marking Marking 6k
Contextual Info: Central CMPF4391 CMPF4392 CMPF4393 TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

transistor k7g

Abstract: IC K07 "dual TRANSISTORs" sot363 MARKING 2907A 2907a CMKT2907A 2907a TRANSISTOR PNP "two TRANSISTORs" sot-363 marking code 04 sot-363
Contextual Info: CMKT2907A CMKT2907AG ULTRAmini SURFACE MOUNT DUAL PNP SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and

CMUT4401

Abstract: CMUT4403
Contextual Info: Central CMUT4401 NPN CMUT4403 PNP COMPLEMENTARY SILICON TRANSISTORS SOT-523 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature

amplifier marking code a c8g

Abstract: CMLDM8120 C81 diode
Contextual Info: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,

CMPT3904

Abstract: CMPT3906 C1A MARKING CMPT3904G c2a marking cg2 SOT-23 marking
Contextual Info: CMPT3904 CMPT3904G* CMPT3906 CMPT3906G* Central NPN PNP COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a

2N2222A npn transistor

Abstract: marking l7g 2N2222A 2N2907A CMLT2207
Contextual Info: Central CMLT2207 CMLT2207G TM Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL, COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207 and CMLT2207G each consist of one isolated 2N2222A NPN transistor and one complementary isolated

2222a

Abstract: dual npn 500ma transistor 2222a data sheet CMLT2222A MARKING CODE l22
Contextual Info: Central CMLT2222A CMLT2222AG* SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices consist of two 2 isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy

marking code C37

Abstract: transistor c37 dual npn 500ma CMLT3410 CMLT3474 CMLT7410 marking code C34
Contextual Info: Central CMLT3410 CMLT3410G* NPN CMLT7410 CMLT7410G* PNP CMLT3474 CMLT3474G* NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: These dual devices are low VCE(SAT) silicon transistors in a PICOmini™ surface mount package

3904 TRANSISTOR PNP

Abstract: 3904 dual 3906 PNP transistor k46 small signal transistor marking codes marking k04 "two TRANSISTORs" sot-363 pnp npn 3904 transistor pnp 3906 3906 npn
Contextual Info: Central CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP SURFACE MOUNT ULTRAminiTM DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-363 CASE FEATURES: • ULTRAminiTM space saving package • Two NPN 3904 or Two PNP (3906) Transistors in a single package

C1R sot23

Abstract: CMPT5088 CMPT5089
Contextual Info: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

c4g TRANSISTOR

Abstract: transistor C4G CMLT3906EG X10-4 CMLT3904EG MARKING code 46g MARKING code 46g sot 563
Contextual Info: Central CMLT3904EG NPN CMLT3906EG PNP CMLT3946EG NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT3904EG two single NPN , CMLT3906EG (two single PNP), and CMLT3946EG (one each NPN and PNP complementary)

SOT-23 IP

Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction
Contextual Info: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable

Contextual Info: Central CMPTA06 NPN CMPTA56 PNP semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06, CMPTA56 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

BC558

Abstract: BC849 BC856 BC856A BC857 BC857A BC858A BC859 BC859A bc4a
Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mounting Pad Layout .016 (0.4) Top View .056 (1.43) .052 (1.33) 1 Pin Configuration 1 = Base, 2 = Emitter, 3 = Collector 0.079 (2.0) .016 (0.4) 0.035 (0.9) Dimensions in inches

X10-4

Contextual Info: CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE SAT (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile

CET3906E TR

Abstract: X10-4 CET3904
Contextual Info: Central CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CET3904E / CET3906E Low VCE SAT NPN and PNP Transistors, respectively, are designed for applications where ultra

CMLT3906EG

Abstract: transistor C4G CMLT3904E CMLT3906E CMLT3946E marking L06
Contextual Info: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS SOT-563 CASE ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)

NIPPON CAPACITORS

Abstract: capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L MRF9200LR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these

TIP35CW

Abstract: TIP36C to-247 TIP36CW Marking STMicroelectronics TO 247 TIP35C transistor JESD97 TIP35C TIP36C TIP35 ecopack
Contextual Info: TIP35CW TIP36CW Complementary Silicon High Power Transistors Features • STMicroelectronics PREFERRED SALESTYPES Description The device is a silicon Epitaxial-Base NPN transistor mounted in TO-247 plastic package. It is intentend for use in power amplifier and

RY130

Abstract: ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K RY169 3296 Variable Resistor terminals BOURNS MRS16T UR73D3ATTE10L0F
Contextual Info: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary resistor product lines sourced from six key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the

CMLDM7003

Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

MRF9135LSR3

Contextual Info: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

CMLDM7002AG

Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current