7430 ic data sheet
Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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lv2327e40rsca53127147/00/02/pp87430 ic data sheet+5msa094339 marking code transistorbp317sc15sot445
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Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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Y parameters of transistors
Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .
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mc34032n22191n4148mbc775+10y parameters of transistorspower transistor transistors equivalentstransistor equivalent tablemicrowave power transistor impedance measurementtransistor 2n2219 data sheet1721e50rmarking 41btransistor marking ply1 marking code transistorsimilar 2n2219 transistor
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TRANSISTOR MARKING CODE NM
Abstract: marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency class A circuit. • Diffused emitter ballasting resistors providing excellent current sharing
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lv2327e40rot445btransistor marking code nmmarking code m2 transistor+5sc15marking m2 npnmicrowave transistor 032327e40rlow voltage power transistor
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2327E40R
Abstract: T445B
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor 2327E40R FEATURES QUICK REFERENCE DATA • interdigitated structure provides high emitter efficiency Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit.
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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lae4001rlae4002slbe2003slbe2009s+14lce2009slee1015tlte21009rlte21015rlte21025rlte42005s1721e50rmarking codesphilips marking code2327e40rmarking codes transistorstransistor 502r8 markingmarking code philips
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