POWERMOS Search Results

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK10B-50US

Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

BUK426-100B

Abstract: transistor BU 110 BUK426-100A
Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode

ht 25 transistor

Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

NDS 40-20

Abstract: BUK437-500B DIODE BB2
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

BUK455-600B

Abstract: LG 631
Contextual Info: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

BUK637-400B

Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

IL 741

Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

uu9.8

Abstract: 7D471K 20/UU9.8
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UPS4602 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION „ DESCRIPTION The UTC UPS4602 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with

Contextual Info: PowerMOSFET Nch •外観図 P6B40HP2 OUTLI NE Package：FB t ：mm Uni 2.3 6.6 400V6A 特 長 品名略号 Type No. 煙面実装タイプ 煙低ノイズ 煙低容量 / dt耐量 煙高アバランシェ耐量高 di P6B40H2 000000 ロット管理記号（例）

Contextual Info: PowerMOSFET Nch •外観図 P3B28HP2 OUTLI NE Package：FB t ：mm Uni 6.6 280V3A 2.3 特 長 品名略号 Type No. 煙面実装タイプ 煙低ノイズ 煙低容量 / dt耐量 煙高アバランシェ耐量高 di P3B28H2 000000 ロット管理記号（例）

Contextual Info: PowerMOSFET •外観図 F21F60CPM OUTLI NE Package：FTO220A （3pi n） （例） ロット記号 Date code 600V21A t ：mm Uni 4.5 10.０ 煙高耐圧 煙低オン抵抗 煙高速スイッチング 品名略号 Type No. 15.０ 管理番号（例） Control No.

k426

Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Contextual Info: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode

BUK445-500B

Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK427-600B

Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

buk657-500

Abstract: BUK657-500B T0220AB transistor D 588
Contextual Info: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK443

Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies