MARKING CODE W2 SOT23 Search Results

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

L282 ST

Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
Contextual Info: TS3431 1.24V PROGRAMMABLE SHUNT VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE 1.24 to 24V ■ SEVERAL PRECISION @ 25°C ±2%, ±1% and ±0.5% ■ SINK CURRENT CAPABILITY 0.4 to 100mA ■ INDUSTRIAL TEMPERATURE RANGE: -40 to +125°C L SOT23-3L Plastic Micropackage

5630 SOT23

Abstract: FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

5630 PKG

Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

5630 PKG

Abstract: FDN5630 sot23 footprint
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

pn2222a fairchild

Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

DO214AC

Abstract: DO219AB DO35 DO41 B15800 GS08
Contextual Info: Vishay Semiconductors Taping of Diodes Axial Lead Components Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices are normally delivered in ammo-

marking code w2 sot23

Abstract: MARKING W2 SOT23 SOD80 marking SOD64 DO214AC DO219AB DO35 DO41 W2 SOT23
Contextual Info: Taping of Diodes 1 Vishay Semiconductors Taping of Diodes 1 AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices

Taping of Diodes

Abstract: taping
Contextual Info: Taping of Diodes www.vishay.com Vishay Semiconductors Taping of Diodes AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped

SOT23 MARK Y3

Abstract: NPN Transistor PN100A PN100A
Contextual Info: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.

2907 TRANSISTOR PNP

Abstract: transistor PN2907
Contextual Info: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

MPS A56 transistor

Abstract: transistor MPS A56 A56 sot k mps a56 transistor bel 188 transistor pnp Marking code mps
Contextual Info: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SOT-23 MARK 2Q

Abstract: BF254 sot-23 transistor p2 marking
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

MPS A06 transistor

Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

mps 0724

Abstract: MPS A92 transistor k mps a92 transistor transistor BR A92 Marking code mps
Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

marking code w2 sot323

Abstract: marking code vishay label marking code w2 sot23 MARKING W2 SOT23 SOD80 marking DO214AC DO219AB DO35
Contextual Info: Taping of Diodes 2 Vishay Semiconductors Taping of Diodes 2 AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices

Contextual Info: ML6206S ML6206S Series Low ESR Cap. Compatible Positive Voltage Regulator Application Features Battery Powered Equipment Palmtops Portable Cameras and Video Recorders Reference Voltage Sources CMOS Low Power Consumption : Typical 1.0uAat Vout=3.0V Output Voltage Range : 1.5V to 5.0V in 0.1V increments

sot23 transistor marking ZF

Contextual Info: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*

mark 2L SOT-23

Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SOT23 MARK Y3

Abstract: sot-23 Marking N2 MMBT200 10bv MARK N2 SOT-23 PN200
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted