MARKING CODE FY* TRANSISTOR Search Results

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor BC SERIES

Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT
Contextual Info: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially

transistor top 222

Abstract: SOT323 Marking LE transistor 222 MARKING BM
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3

tokin 473 5.5v

Abstract: tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F
Contextual Info: SUPERCAPACITOR WORLD WIDE WEB EC-200E SUPERCAPACITORS ELECTRIC DOUBLE-LAYER CAPACITORS Vol.02 CONTENTS TOKIN SUPERCAPACITORS / WORLD WIDE WEB ORGANIZATION OF SUPERCAPACITOR SERIES 3 BACKUP PERFORMANCE SELECTION 3 OPERATING PRINCIPLES 4 TYPICAL APPLICATIONS

marking code ACP transistor

Abstract: marking code AAp BCW60C
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage

Contextual Info: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

Contextual Info: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz

MARKING CODE SMD IC T2B

Abstract: SMD T2B sot23 marking code SMD MARKING CODE jt MARKING CODE SMD IC marking code d95 lg smd transistor marking code br SMD MARKING SMD IC CODE PMBTA05
Contextual Info: 7110flEb 001^853 T2b • PHIN PMBTA05 PMBTA06 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

TRANSISTOR SMD MARKING CODE JSs

Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with

marking code AC sot 23-5

Abstract: marking BFG
Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

transistor C 5611

Abstract: 35 micro-X Package MARKING CODE Q
Contextual Info: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2

TRANSISTOR t1p

Abstract: marking t1p t1p TRANSISTOR
Contextual Info: Philips Semiconductors Product specification NPN switching transistors FEATURES PMST2222; PMST2222A PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification.

smd transistor P2D

Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Contextual Info: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

Siemens A 1458

Abstract: amplifier siemens sot-363
Contextual Info: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572

BFR194

Contextual Info: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!

CM 1241 siemens

Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Contextual Info: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: Supercapacitors FY Series Overview Applications FY Series Supercapacitors, also known as Electric DoubleLayer Capacitors EDLCs , are intended for high energy storage applications. Supercapacitors have characteristics ranging from traditional capacitors and batteries. As a result, supercapacitors can be

2222a sot23

Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Contextual Info: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.

bcb57b

Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Contextual Info: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80