MARKING CODE CB EN IC Search Results

Contextual Info: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.

AUIR0815STR

Abstract: AUIRS2117 st 13001 TRANSISTOR AUIR0815 ssd 545 dc drive
Contextual Info: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.

marking 1F 6 pin

Abstract: transistor marking 1f 1F TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LR3XXYYB Preliminary CMOS IC 150mA 2CH LDO REGULATOR „ DESCRIPTION The UTC LR3XXYYB are CMOS voltage regulator ICs that have high output voltage accuracy, low dropout, low supply current, and high ripple rejection. Every voltage regulator IC of UTC

MARKING 720 SOT23

Abstract: SOT23 MARKING CODE 720 BCX71H BCX71J BCX71K BCX70 BCX71 BCX71G transistor with marking BH BJ MARKING CODE
Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistors BCX71 series FE A T U R E S PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in

BCW69

Abstract: BCW70 BCW71 BCW72 sot23 marking JR
Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistors BCW69; BCW70 FE A T U R E S PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: BEE D • flS 3 b 3 2 Q 0G172ÔÜ S « S IP PNP Silicon A F Transistors SIEM EN S/ • • • SPC L-i T ' - l ' i - J *7 SEM ICO N DS _ SMBTA55 S M B T A 56 High breakdown voltage Low oollector-emitter saturation voltage Complementary types: S M B T A 05, S M B TA 06 NPN

LAE4001R

Abstract: SC15 MGL069
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.

Contextual Info: EVALUATION KIT AVAILABLE MAX15091/MAX15091A 2.7V to 18V, 9A, Integrated Hot-Swap Solution with Current Report Output General Description Features The MAX15091/MAX15091A ICs are integrated solutions for hot-swap applications requiring the safe insertion and

Contextual Info: EVALUATION KIT AVAILABLE MAX15091/MAX15091A 2.7V to 18V, 9A, Integrated Hot-Swap Solution with Current Report Output General Description Features The MAX15091/MAX15091A ICs are integrated solutions for hot-swap applications requiring the safe insertion and

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

hp 502 transistor

Abstract: t918 ma t918
Contextual Info: Central C M P T918 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C EN TR AL SEM IC O N D U C TO R CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency VHF/UHF

marking code 1F

Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T FEATURES PINNING • Low curren t max. 100 mA

transistor Ba 850c

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC849W; BC850W NPN general purpose transistors FEATURES PINNING • Low curren t max. 100 mA

tbc857c

Abstract: TBC857B
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES PINNING • Low curren t max. 100 mA

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING • High current max. 500 mA PIN

C847

Abstract: el 847 c847
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING • Low curren t max. 100 mA

C849

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low curren t max. 100 mA

TRANSISTOR gy 740

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING • Low cu rrent max. 30 mA PIN • Low voltage (max. 20 V).

T5550

Contextual Info: DISCRETE SEMICONDUCTORS PMST5550; PMST5551 NPN high-voltage transistors 1999 Apr 29 Product specification Supersedes data of 1997 May 20 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551

marking code CB en ic

Contextual Info: KST5088/5089 NPN EPITAXIAL SILICO N TRANSÌSTOR LOW NOISE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta = 25°C r Characteristic Symbol Collector-Base Voltage Rating Unit 35 30 V V 30 25 4.5 50 350 150 •V V cB O KST5088 KST5089 Collector-Emitter Voltage

CMXT2222A

Abstract: NPN transistor marking NY
Contextual Info: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:

C849

Abstract: BC850 SOT23 276.C850
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 06 PHILIPS Philips Semiconductors Product specification

pml 003 am

Abstract: transistor c s x 13001 transistor te 13001 ic pml 003 am R0815 SP 13001 AUIR0815 SP 13001 transistor PAR/AEC-Q100
Contextual Info: AUIR R0815 5S AUTOMOT A TIVE GRA ADE Octo ober 26, 20 011 BUFFER GATE G D DRIVER R IC Feattures • High peak output currentt > 10A ation delay tiime • Low propaga an be applied d to VEE using g an external • Negative turrn off bias ca