0G172Ô Search Results

IRF624

Contextual Info: b?E i> SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 2 0017270 ÔTR « S M Û K N-CHANNEL POWER MOSFETS IR F624/625 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: BEE D • flS 3 b 3 2 Q 0G172ÔÜ S « S IP PNP Silicon A F Transistors SIEM EN S/ • • • SPC L-i T ' - l ' i - J *7 SEM ICO N DS _ SMBTA55 S M B T A 56 High breakdown voltage Low oollector-emitter saturation voltage Complementary types: S M B T A 05, S M B TA 06 NPN

Contextual Info: LT1328 u r m TECHNOLOGY 4M bps IrDA In fra re d R e ce ive r F€OTUR€S D€SCRICTIOn • SIR , FIR and 4ppm Compatible ■ Low Frequency Ambient Rejection Loop ■ Supply Current: 2mA ■ 8-Lead MSOP and SO Packages ■ 5V Single Supply Operation ■ Optional High Frequency Noise Rejection

Contextual Info: DS2422/DS2423 PRELIMINARY D A L L A S s e m ic o n d u c to r D S 2 4 2 2 /D S 2 4 2 3 1 K/4 K—Bit 1 —W ir "^ RAM with C o u n t© rs FEATURES PIN ASSIGNMENT • 4096 bits of SRAM DS2423 , 1024 bits with the DS2422 T S O C PACKAGE • Four 32-bit read-only counters (DS2423), three