0G172 Search Results

Contextual Info: INTERNATIONAL RECTIFIER bSE ]> • 4055452 0G17232 77T « I N R PD-2.309 International noR i Rectifier 4ocp qo so 4 o c p q i oo SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Description/Features The 40CPQ. center tap Schottky rectifier has been opti­

Contextual Info: BEE D • flEBbBBG 0G17203 *\ «SIP NPN Silicon Darlington Transistors P ZTA 13; P Z TA 14 “ SIEMENS/ SPCL-i SEMICONDS • • • • For general A F applications High collector current High current gain Complementary types: PZ TA 63 / 64 PNP Type M arking

f327

Abstract: TA8349 TA8348 2N6384 2N6385 shockley diode 2N6383 2N6383 RCA 2N6385 RCA GA-14
Contextual Info: 3875081 G E SOLID STATE 01 3Ö7S0Ö1 0G17243 Û Darlington Power Transistors File Number 609 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c {FLANGE I Features: • Operates fro m 1C w ith o u t p redriver

Contextual Info: BEE D • flS 3 b 3 2 Q 0G172ÔÜ S « S IP PNP Silicon A F Transistors SIEM EN S/ • • • SPC L-i T ' - l ' i - J *7 SEM ICO N DS _ SMBTA55 S M B T A 56 High breakdown voltage Low oollector-emitter saturation voltage Complementary types: S M B T A 05, S M B TA 06 NPN

TA8349

Abstract: 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA
Contextual Info: 3875081 G E SOLID ST AT E 01 1 > F | 3Ô7S0Û1 0G17243 fi File Number 609 ¿ y -*? 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c Features: • ■ {FLANGE I Operates from 1C w ithout predriver

Contextual Info: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk

45db321

Abstract: at45db321 code TSOP-20 9j46 1S558 9P9914
Contextual Info: PAGE 1 OF 5 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-45DB321 FLASH RELIABILITY DATA - EXTENDED TEMPERATURE CYCLE - 121°C/15PSG PRESSURE POT TEST - 150°C RETENTION BAKE (PLASTIC) - 125°C DYNAMIC OPERATING LIFETEST (PLASTIC) JULY 2003 2325 Orchard Parkway San Jose CA. 95131

cxd1135

Abstract: cxd1125 Sony CXD1135 sony cxd1125 Mitsubishi transistor databook m50423 Mitsubishi databook Mitsubishi High-Frequency Devices databook TDA1311 TDA1311A
Contextual Info: Philips Semiconductors Preliminary specification Stereo Continuous Calibration DAC CC-DAC TDA1311A FEATURES GENERAL DESCRIPTION • Voltage output The TDA1311A; AT is a voltage-driven digital-to-analog converter and is new generation of DAC devices which

Contextual Info: 0017230 202 • MITSUBISHI RF POWER MODULE M57775 806-866MHZ, 8V, 400mW, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © S H h PIN : © P in : RF INPUT VCC1 : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY ®Po e o + 1 fs. 1 21.5 ± 0 . 8

Contextual Info: Data Sheet May 1995 S t AT&T r Microelectronics DSP1610 Signal Coding Digital Signal Processor 1 Features 2 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip ■ Low-power (15 mW/MIPS typical)

514100A

Contextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated

Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

Contextual Info: Ordering number : ENÌ% 5090A CMOS LSI i SAÊlYO No. * 5090A LC378100PP, PM-10/LC3781OOPP, PM-20LV 8 MEG 1048576 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC3781OOPP, PM-10 and LC378100PP, PM-20LV are 8388608-bit Mask Programmable Read Only

Contextual Info: 4 MEG x 4 EDO DRAM MICRON TECHNOLOGY. INC. lì R A M L S r T M IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art high-performance, low power CMOS

Contextual Info: DS2407 DALLAS SEMICONDUCTOR DS2407 Dual Addressable Switch Plus 1K—Bit Memory FEATURES PIN ASSIGNM ENT • Open drain PIO pins are controlled and their logic level can be determined over 1 -W ire bus for closed-loop control TO-92 TSOC PACKAGE DALLAS

bb 9790 schematic diagram

Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
Contextual Info: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one

Contextual Info: DS2404 DALLAS SEMICONDUCTOR DS2404 EconoRAM Time Chip FEATURES PIN ASSIGNMENT • 4096 bits of nonvolatile dual-port memory including real time clock/calendar in binary format, program­ mable interval timer, and programmable power-on cycle counter vccnn 1

OPT01

Abstract: TLG223
Contextual Info: Tí TOSHIBA {DISCRETE/OPT01 9097250 TOSHIBA <DISCRETE/OPTO dF | ' íü, :]72SD 99D 17268 GülTatfl 3 DT-^\-3S“ T L G 2 2 3 I, T L G 4 2 3 6 ,T L G 2 2 8 I, TLG4286 GREEN COLOR 4 DIGITS LED DISPLAY 4 Even digit space for use of the multiplex drive connections and available both

CY7C1006

Contextual Info: CY7C1006 PRELIMINARY JL Jfc JL * JLwl 256K x 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

IRF624

Contextual Info: b?E i> SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 2 0017270 ÔTR « S M Û K N-CHANNEL POWER MOSFETS IR F624/625 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors UMZ1N/ IMZ1A •F e a tu re s 1) B o th • E x te r n a l dim ensions (Units: mm ) 2SA1037AK c h ip and 2 S C 2 4 1 Z K chip in U M T a n d S M T IMZ1A UMZ1N 2.0 ± 0.2 2) 0 .9 ± 0 .1 1 .9 ± 0 .2

7A101

Abstract: 3205 decoder 3224t
Contextual Info: Ordering number : EN8 399 Asynchronous Silicon Gate CMOS LSI No, ^ 5 3 9 9 ¡I SAmro LC361000AMLL, ATLL, ARLL-70X/10X 1 MEG 131072 words x 8 bits SRAM Preliminary Overview Package Dimensions The L C 361000AMLL, ATLL, and ARLL are 131072 words x 8 bits asynchronous silicon gate CMOS static

Contextual Info: LT1328 u r m TECHNOLOGY 4M bps IrDA In fra re d R e ce ive r F€OTUR€S D€SCRICTIOn • SIR , FIR and 4ppm Compatible ■ Low Frequency Ambient Rejection Loop ■ Supply Current: 2mA ■ 8-Lead MSOP and SO Packages ■ 5V Single Supply Operation ■ Optional High Frequency Noise Rejection

Contextual Info: O rdering num ber : EN 5K4541B CMOS LSI No. LC331632M-70/80/10/12 4541B 512 K 32768 words x 16 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC331632 series is composed o f pseudo static RAM th a t o p e ra te o n a sin g le 5 V p o w e r su p p ly and are