7CLB4142 Search Results

Contextual Info: KM41 V4000DT CMOS DRAM ELECTRONICS 4 M X 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: KM416V256DT CMOS D R A M ELECTRO NICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM44C4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: KM44C1004DT CMOS DR A M ELECTR O NICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM41C1000CJ-6

Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
Contextual Info: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

C1204B

Contextual Info: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

ks57c2016

Abstract: samsung KS57C2016 sequential timer working
Contextual Info: KS57C2016 C l C i* ELECTRONICS Microcontroller DESCRIPTION The KS57C2016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an up-to-20-digit LCD direct-drive capability and up to 40 pins for LCD segment data output, a versatile 16-bit

pj 86 diode

Abstract: pj 54 diode 60v 10a p type mosfet diode 4j T02202 RS DT 27 DIODE PJ 63 diode RS-242
Contextual Info: IRFZ14A A d va n ce d Power MOSFET FEATURES BVDss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature