hp 502 transistor
Abstract: t918 ma t918
Contextual Info: Central C M P T918 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C EN TR AL SEM IC O N D U C TO R T918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency VHF/UHF
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cmpt918ot-2310ntrtlj7500mhz+5200mhz60mhzhp 502 transistort918ma t918
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t918
Abstract: 10000 uf ovam 40
Contextual Info: E èÎËQGÇS T918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset
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awt918900/d900/gt918+210000 ufovam 40
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CMPT918
Abstract: rf-transistor
Contextual Info: Central C M P T918 Sem iconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CEN TR AL SE M IC O N D U C T O R T918type is an NPN silicon RFtransistor manufactured by the epitaxial planarprocess, epoxy molded in a surface mount package, designed for high frequency VHF/UHF
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cmpt918ot-23cmpt918type100mhz+510mhz500mhz200mhz60mhzrf-transistor
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T-918
Abstract: Wideband t918 T 918 Dc to Dc 102 inductance 102
Contextual Info: WIDEBAND TRANSFORMER Turns Ratio + 2% 1:1:1 PARAMETER MIN. Inductance 1.8 MAX. UNITS MHy Leakage Inductance 0.6 µHy Capacitance (CW/W) 45 pF Primary DC Resistance 1.0 ohms Secondary DC Resistance 1.0 ohms Tertiary DC Resistance 1.0 ohms Return Loss 51 to 102 KHz
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3072khzt-918896-09ratiowideband+4t918t 918dc to dc 102inductance 102
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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ot-23bcv71bfq31bcv72+10bfq31abcw29bfs20bcw30bcw31bcw32bcw65cferranti electronicstransistors device markingbf197p
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m6 marking transistor sot-23
Abstract: C5 MARKING TRANSISTOR transistor marking code 7E SOT-23 transistor ad 1v TRANSISTOR a43 A12 marking ht3 SOT23 transistor cg sot-23 transistor G1 SOT-23 transistor sot-23 Marking AR
Contextual Info: FERRANTI semiconductors HT3 PNP S ilicon Planar H igh V o lta g e T ra n s is to r D E S C R IP T IO N T h is p la s tic e n c a p s u la te d tra n s is to r is d e s ig n e d fo r a n y a p p lic a tio n re q u irin g h ig h v o lta g e c a p a b ility a t re la tiv e ly lo w
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ot-23fmmt-a13fmmt-a14bcw67a+15fmmt-a20bcw67bfmmt-a42bcw67cfmmt-a43m6 marking transistor sot-23c5 marking transistortransistor marking code 7e sot-23transistor ad 1vtransistor a43a12 markinght3 sot23transistor cg sot-23transistor g1 sot-23transistor sot-23 marking ar
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kn sot23
Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices
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bsv52ot-23volt00/300fmmt2222+12fmmt2369afmmt2369bss82bkn sot23sot-23 marking kna12 markingctc ef 12533 m8 sot23transistor eh sot-23marking code transistors bsv52marking code 25x sot23c5 marking transistor
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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T716
Abstract: T714 t918 t505 Elite Microelectronics t718 T10610 t702 8 T907 T101
Contextual Info: 9. e88C 412 ELECTRICAL & TIMING SPECIFICATION 9.1 Storage and Operating Characteristics 9.1.1 Absolute Maximum Ratings Vss = 0 volts Stresses above the conditions listed in this section may cause permanent damage to the device. This is a stress rating only. The functional operation of the device at these or any
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e88c412t716t714t918+7t505elite microelectronicst718t10610t702 8t907t101
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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MARKING CODE A06
Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica tio n s such as Audio Frequency Am plifiers, Drivers,
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fmmt-a05fmmt-a55fmmt-a56ot-23+14fmmt-a13fmmt-a14bcw67afmmt-a20marking code a06marking 1g sot23sot-23 marking code g1ah a06sot-23 body marking 1p npne30551marking a06a12 markingamplifier a55 markingsot-23 marking g1
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SOT-23 EBC
Abstract: ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65 BSS65R BCW30
Contextual Info: FERRANTI i semiconductors BSS65 P N P S i l i c o n Plana r Hi gh Sp e e d S w i t c h i n g Transistor DESCRIPTION These devices are intended for use in high speed switchllng and high frequency amplifier applications. Encapsulated in the popular SOT-23 package, those
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bss65ot-23colle00/300fmmt2222+13fmmt2369afmmt2369bsv52bss82bsot-23 ebczd 103 matransistor marking code 7e sot-23transistor a43ferrantimarking ag sot 23transistor sot-23 marking arbss65rbcw30
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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2004c2004s2004dz5250b+11t3904z5251bz5252bz5253bz5254bz5255bbzx 48c 6v8pt2369code cj5cmxz11vto7006s
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902
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asus F3J inverter
Abstract: T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS
Contextual Info: A B C D E F2J SCHEMATIC R11 ER Content PAGE 1 2 3 4 PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 YONAH CPU (1) YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.
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rtl8111basus f3j invertert3509schematic asus f3j inverter+7alc660asus f3jc2406 dioder5538d001asus f3j power inverterc2407asus
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ferranti
Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices
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fmmt-a20ot-23fmmt5087bcw69+14bcw70bcx71gbcx71hbcx71jbcx71kferrantifmmt2222abcv72bcw29bcw30bcw31bfq31bfq31abfs20
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sot-23 MARKING CODE G1
Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,
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fmmt-a55fmmt-a56fmmt-a06ot-23+13fmmt-a13fmmt-a14bcw67afmmt-a20sot-23 marking code g1code marking 2m sot-23sot23 marking m8marking code t4 sot-23sot 23 marking code 2ta56 sotferrantimarking code fa sot23amplifier a55 marking
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BCV72
Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
Contextual Info: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.
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fmmt4125ot-23fmmt5087bcw69+14bcw70bcx71gbcx71hbcx71jbcx71kbcv72bcw29bcw30bcw31bfq31bfq31abfs20transistor dg sot-23ferranti
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marking of m7 diodes
Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.
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bss64bss63ot-23fmmt-a13+14fmmt-a14bcw67afmmt-a20bcw67bfmmt-a42marking of m7 diodesa12 markingbss64rc5 marking transistordevice marking code s4diode marking 2tdiode marking m7transistor marking code sot-23 2fmarking h2
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transistor marking code 7E SOT-23
Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.
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bss63bss64ot-23fmmt-a13+14fmmt-a14bcw67afmmt-a20bcw67btransistor marking code 7e sot-23transistor dg sot-23marking 1p transistor sot23d6 transistor markingm6 marking transistor sot-23sot-23 marking code g1transistor 1p sot23transistor sot-23 marking artransistor g1 sot-23transistor cg sot-23
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marking code AD
Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid
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fmmt2369aot-23curre00/300fmmt2222+14fmmt2369bsv52bss82bbss82cmarking code adtransistor eh sot-23zd 103 mabcv72bcw29bcw30bcw31bfq31bfq31abfs20
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