WIDEBAND Search Results

ro4003 8mil

Abstract: QFN 4X4 aug22
Contextual Info: Advance Product Information Aug.22, 2006 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information March 4, 2005 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information July 13, 2006 Wideband LNA with AGC TGA2513 Key Features • • • • • • • • Primary Applications • Wideband Gain Block / LNA • X-Ku Point to Point Radio • IF & LO Buffer Applications Product Description Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV

Contextual Info: OPA688 OPA 688 OPA 688 For most current data sheet and other product information, visit www.burr-brown.com Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

LMH6624MFX

Abstract: A98A
Contextual Info: LMH6624,LMH6626 LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier Literature Number: SNOSA42E LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier General Description Features The LMH6624/LMH6626 offer wide bandwidth 1.5GHz for

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451A – DECEMBER 2004 – REVISED MARCH 2005 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain

Contextual Info: OPA830 SBOS263D − AUGUST 2004 − REVISED MARCH 2006 Low-Power, Single-Supply, Wideband Operational Amplifier FEATURES DESCRIPTION D HIGH BANDWIDTH: D D D D D D D 250MHz G = +1 110MHz (G = +2) LOW SUPPLY CURRENT: 3.9mA (VS = +5V) FLEXIBLE SUPPLY RANGE:

Contextual Info: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1

Contextual Info: THS4303 www.ti.com SLOS421B – NOVEMBER 2003 – REVISED JANUARY 2005 WIDEBAND FIXED-GAIN AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • Fixed Closed-Loop Gain Amplifier – 10 V/V 20 dB Wide Bandwidth: 1.8 GHz High Slew Rate: 5500 V/µs

Contextual Info: DGN-8 D-8 THS4502-EP THS4503-EP www.ti.com SGLS291 − APRIL 2005 WIDEBAND, LOWĆDISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D Controlled Baseline D One Assembly/Test Site, One Fabrication Site D Extended Temperature Performance of −555C D D D D D

OPA2674

Contextual Info: OPA2674 SBOS270A − AUGUST 2003 − REVISED MAY 2006 Dual Wideband, High Output Current Operational Amplifier with Current Limit FEATURES D D D D D D D D DESCRIPTION WIDEBAND +12V OPERATION: 220MHz G = +4 UNITY-GAIN STABLE: 250MHz (G = +1) HIGH OUTPUT CURRENT: 500mA

AD1010

Contextual Info: PA16PA16 • PA16A • PA16A PA16, PA16A Power Operational Amplifiers FEATURES DESCRIPTION The PA16 and PA16A are wideband, high output current operational amplifiers designed to drive resistive, inductive and capacitive loads. Their complementary “collector output” stage can swing close to the supply

ups PURE SINE WAVE schematic diagram

Abstract: 3 phase ups PURE SINE WAVE schematic diagram R262 BR262W30A103E1G BR262W30 electret mems microphone preamplifier BR262 WLCSP-30 BR262W26A103E1G make three phase ups schematic diagram
Contextual Info: BelaSigna R262 Wideband Voice Capture and Noise Reduction Solution Introduction • Drop−in Solution that Works without Special Tuning • Consistently Captures Voice Regardless of Acoustic Environment or • • • • • • the Orientation of the Handheld Device While in Use

LTC5585

Abstract: demodulate IR phase shifter dc to 100mhz 4G base station power amplifier
Contextual Info: Optimizing the Performance of Very Wideband Direct Conversion Receivers Design Note 1027 John Myers, Michiel Kouwenhoven, James Wong, Vladimir Dvorkin Introduction Zero-IF receivers are not new; they have been around for some time and are prominently used in cell phone

Contextual Info: LMH6733 LMH6733 Single Supply, 1.0 GHz, Triple Operational Amplifier Literature Number: SNOSAW0C LMH6733 Single Supply, 1.0 GHz, Triple Operational Amplifier General Description Features The LMH6733 is a triple, wideband, operational amplifier designed specifically for use where high speed and low power

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

zo 402

Contextual Info: OPA2822 OPA 282 2 SBOS188E – MARCH 2001 – REVISED AUGUST 2008 www.ti.com Dual, Wideband, Low-Noise Operational Amplifier FEATURES ● ● ● ● ● ● DESCRIPTION LOW INPUT NOISE VOLTAGE: 2.0nV/√Hz HIGH UNITY GAIN BANDWIDTH: 500MHz HIGH GAIN BANDWIDTH PRODUCT: 240MHz

sot23 marking V2p

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION

LH6739

Contextual Info: LMH6739 LMH6739 Very Wideband, Low Distortion Triple Video Buffer Literature Number: SNOSAD2F LMH6739 Very Wideband, Low Distortion Triple Video Buffer General Description Features The LMH6739 is a very wideband, DC coupled monolithic selectable gain buffer designed specifically for ultra high resolution video systems as well as wide dynamic range systems

BFQ19

Abstract: BFQ19C
Contextual Info: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

150w audio amplifier circuit diagram class free d

Abstract: 50w 14v audio amplifier 4th-order active butterworth bandpass filter
Contextual Info: OPA4830 ¨ www.ti.com. SBOS350A – DECEMBER 2006 – REVISED MAY 2008 Quad, Low-Power, Single-Supply, Wideband Operational Amplifier