MARKING CL3 Search Results

Contextual Info: Data Sheet Rev.1.0 29.01.2009 512MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Marking -50 -60 -75 1 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks

FPLR cable

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5100UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 14 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5000UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 12 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every

UL-1666

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5000UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 12 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every

JESD97

Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
Contextual Info: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD

Contextual Info: 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option

Contextual Info: MT8D88C132 S , MT16D88C232(S) 4MB, 8MB DRAM CARDS MICRON I TECHNOLOGY. INC. DRAM CARD 4,8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access -6

Contextual Info: Preliminary‡ 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option

MT48LCM32B2

Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
Contextual Info: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard

micron DRAM

Contextual Info: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access

MICRON POWER RESISTOR 24W

Contextual Info: ADVANCE MICRON ft M T24D T J472(S 4 MEG x 72 DRAM MODULE SElMCONOUCTQft MC 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Components SOJ TSOP D DT • Packages

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

A100S

Abstract: MT48H32M32
Contextual Info: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4

MT48H4M32

Abstract: MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound
Contextual Info: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

MT48H16M16LF

Abstract: MT48H8M32LF
Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

E5 MARKING

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

8M16

Abstract: MT48H4M32
Contextual Info: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free

Contextual Info: 1 PRELIMINARY M IC R O N • 8 MEG X StMlCOMCUCTOR. INC MT16D832 32,16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG X16 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 Packages Leadless 72-pin SIMM Leadless 7 2 -pin SIMM gold

Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free

MT48LCM32B2P

Abstract: MT48LCM32B2 x32s
Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • blllSMT 000635^ 3T4 ■ URN PRELIMINARY piir~nnrr mh2D88C436 4 MEG x 36, 8 MEG x 18 IC DRAM CARD IC DRAM CARD 16 MEGABYTES 4 MEG x 36, 8 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing

Contextual Info: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4 banks

MT48LC2M3B2b5

Abstract: MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS
Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free