Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Contextual Info: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128mb144mbhs032n02ehs032n02d+15hs032n02chs032n02bhs032e02ehs032e02dhs032e02chs032e02bdevice marking code b12 b13 b14 b15 b16marking b56device marking code b52marking a78a80 marking codemarking code b49a64 marking codea45 interfacemarking code b38
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B340A
Abstract: B330LA b34 MARKING marking B34 diode SCHOTTKY marking B34 general
Contextual Info: B330LA & B340A Vishay Semiconductors New Product formerly General Semiconductor High-Current Density Surface Mount Schottky Rectifier DO-214AC SMA Reverse Voltage 30 & 40V Forward Current 3.0A Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54)
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b330lab340ado-214ac50mvp-p+3b34 markingmarking b34 diode schottkymarking b34 general
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b330la
Contextual Info: B330LA & B340A Vishay Semiconductors New Product formerly General Semiconductor High-Current Density Surface Mount Schottky Rectifier DO-214AC SMA Reverse Voltage 30 & 40V Forward Current 3.0A Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54)
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b330lab340ado-214acmil-std750+150mvp-p
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b330la
Contextual Info: B330LA & B340LA New Product Vishay General Semiconductor High-current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 30 V, 40 V IFSM 65 A VF 0.50 V, 0.55 V Tj max. 150 °C DO-214AA (SMB) Features Mechanical Data
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b330lab340lado-214aaj-std-020c+3jstd-002bjesd22-b102db340a
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b34 surface mount
Abstract: B340A b330la
Contextual Info: B330LA & B340A New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 30 V, 40 V IFSM 65 A VF 0.50 V, 0.55 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data
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b330lab340ado-214acj-std-020c+4do-214aaj-std-002bjesd22-b102db34 surface mount
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Contextual Info: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256mb288mbhs256n08ehs256n08d+15hs256n08chs256n08bhs256e08ehs256e08dhs256e08cmarking code b49marking b56marking a71marking a46 b36device marking code b12 b13 b14 b15 b16a80 marking codea64 marking codemarking code b38a45 interfacea77 marking
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siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Contextual Info: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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hyr16xx30/hyr18xx20g128mb/144mb600mhz+8800mhz128mbhyr16xx30g/hyr18xx20gsiemens a55siemens a70marking b28siemens a57siemens b38
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MARKING B83
Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Contextual Info: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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hyr163200g600mhz800mhz+11128mbmarking b83a74 markingdiode u2 a90marking a32hyr163200g-653hyr163200g-745hyr163200g-840hyr163200g-845hyr183200g-653hyr183200g-745
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b330la
Contextual Info: B330LA & B340A New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 30 V, 40 V IFSM 65 A VF 0.50 V, 0.55 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data
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b330lab340ado-214acj-std-020c+4do-214aaj-std-002bjesd22-b102d08-apr-05
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B340A
Abstract: b330la
Contextual Info: B330LA & B340A New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 30 V, 40 V IFSM 65 A VF 0.50 V, 0.55 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data
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b330lab340ado-214acj-std-020c+4do-214aaj-std-002bjesd22-b102d08-apr-05
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SoRIMM
Abstract: ic marking B48 711 B34 a64 pcb rdram 600 mhz marking a20 5pin
Contextual Info: Advance Information RAMBUS Rambus® SO-RIMM Module with 128/144Mb RDRAMs Overview Key Timing Parameters The Rambus® SO-RIMM™ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including computer memory, mobile “Thin and Light” PCs,
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128/144mb128mb/144mbdl0076sorimm+5ic marking b48711 b34a64 pcbrdram 600 mhzmarking a20 5pin
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Contextual Info: TOSHIBA TENTATIVE TC75W57FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W57FU DUAL COMPARATOR TC75W57FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar
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tc75w57fu172m70q2153gq021s31 |
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B330LA
Abstract: B340A JESD22-B102D J-STD-002B
Contextual Info: B330LA & B340A New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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b330lab340aj-std-020cdo-214ac+52002/95/ec2002/96/ec08-apr-05jesd22-b102dj-std-002b
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B340LB
Contextual Info: New Product B340LB Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop
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marking code B34
Abstract: B330LA diode marking b34 B340A JESD22-B102D J-STD-002B
Contextual Info: B330LA & B340A New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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b330lab340aj-std-020cdo-214ac+72002/95/ec2002/96/ec08-apr-05marking code b34diode marking b34jesd22-b102dj-std-002b
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Contextual Info: New Product B330LA & B340A Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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hyr16xx49g128mbhyr163249g-653hyr163249g-840+3hyr166449g-653hyr166449g-845a17 infineon
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288mb600mhz711mhz800mhz+6a23 851 diodediode 910 b34hymr225616hymr26416256mx16h-745
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H-840
Abstract: H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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B340A
Abstract: b330la
Contextual Info: New Product B330LA, B340A Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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b330lab340aj-std-0202002/95/ec+42002/96/ecdo-214acaec-q101any18-jul-08
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B340LB
Abstract: JESD22-B102 J-STD-002
Contextual Info: New Product B340LB Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop
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b340lbj-std-020do-214aa2002/95/ec+42002/96/ec18-jul-08jesd22-b102j-std-002
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marking A26
Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx20g/hyr18xx20g256mb128mb+10marking a26hyr1612820g-845hyr1812820g-653hyr1812820g-745hyr1812820g-845hyr1612820g-653hyr1612820g-745hyr1612820g-840hyr1612a52 ld
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Contextual Info: New Product B340LB Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop
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B330LA
Abstract: B340A JESD22-B102 J-STD-002
Contextual Info: New Product B330LA & B340A Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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