MARKING ABF Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: KEMET Part Number: C0805N130J1GSH7189 C0805N130J1GSH7189, CDR31BP130BJSS-T&R Capacitor, ceramic, 13 pF, +/-5% Tol, 100V, C0G, 0805 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: 13 pF Chip Size: 0805 Voltage:

Q62702-P1610

Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Contextual Info: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

bpw filter

Abstract: 34FAS BPW 34 FAS
Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT BPW 34 FA BPW 34 FAS LO r*- o to o o 0 Cathode marking ,4.0, spacing Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643

foto transistor

Abstract: phototransistor 500-600 nm GEO06391 OHFD1422 Q68000-A7852 LPT 80 A
Contextual Info: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g

LPT 80 A

Abstract: GEO06391 OHFD1422 Q68000-A7852 IRL80A LPT IC IRL81a
Contextual Info: LPT 80 A NPN-Silizium-Fototransistor Silicon NPN Phototransistor 16.51 16.00 1.52 1.29 1.14 2.54 2.03 Collector 2.34 2.08 0.64 0.46 4.57 4.32 2.54mm spacing 1.52 5.84 5.59 LPT 80 A 1.70 1.45 1.52 Plastic marking R = 0.76 feo06391 0.64 0.46 GEO06391 Approx. weight 0.2 g

GEO06643

Abstract: GEO06863 Q62702-P1129 Q62702-P463 BPW 34 FAS
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 FA BPW 34 FAS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT 0.6 0.4

bpw 104

Abstract: GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F
Contextual Info: 0.8 0.6 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 F BPW 34 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8

p945

Abstract: transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945
Contextual Info: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 B 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6

GEO06075

Abstract: GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BP 104 F BP 104 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8

151S5

Contextual Info: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications

Contextual Info: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im  SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in  SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking

E9087

Abstract: GEO06643 GEO06863 GEO06916 Q62702-P1604 Q62702-P1826 Q62702-P929
Contextual Info: feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter

GEO06643

Abstract: Q62702-P76
Contextual Info: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 . 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g

BPW34S

Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Contextual Info: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing Photosensitive area 2.65 mm X 2.65 mm CO Approx. weight 0.1 O CO GE006643 o o 0 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

Q62702-P945

Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking 4.0 o o^r J 1r f ^ 1 -Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

Contextual Info: SMT Power Inductors SMT-Power-Induktivitäten 11 max. Marking 10.4 ref. 13.1 max. 2.3 ref. SMT power inductors B82559 h • Sizes: 13.1 x 11 x 4.95 mm ■ Baugrößen: 13.1 x 11 x 4.95 (mm) 13.1 x 11 x 5.95 (mm) ■ Core material: ferrite ■ Helically wound

Contextual Info: SIEMENS Silizium-Fotodiode Silicon Photodiode BPW 33 Cathode marking 4.0 Chip position CO o o LO co co 1 4a i mm spacing -Photosensitive area 2.65 mm x 2.65 mm CO Approx. weight 0.1 O C O o o 0 GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

feo06643

Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm

fototransistor led

Abstract: GPL06965
Contextual Info: SMT Multi TOPLED SFH 7221 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 0.9 0.7 3 C A E 0.1 typ 1.1 0.5 3.4 3.0 C 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking 0.6 0.4 GPL06965 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

fototransistor led

Abstract: GPL06965
Contextual Info: SMT Multi TOPLED SFH 7221 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 0.9 0.7 3 C A E 0.1 typ 1.1 0.5 3.4 3.0 C 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking 0.6 0.4 GPL06965 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

c 331 transistor

Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.