169FF Search Results

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking

Contextual Info: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im  SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in  SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

FAA064

Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

GPL06724

Abstract: GPL06880
Contextual Info: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 2.1 1.7 3.7 3.3 0.9 0.7 1.1 0.5 3.4 3.0 2.4 0.1 typ 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

top side a4 marking

Abstract: 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

s29gl032m10tair

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics

S70GL01GN00

Abstract: S29GL01GP S29GL512N
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP

Q62702-P1055

Abstract: GPL06880 GPL06724 Q62703-P0331
Contextual Info: 3.0 2.6 2.3 2.1 2.1 1.7 3.7 3.3 0.9 0.7 1.1 0.5 3.4 3.0 2.4 0.1 typ SFH 421 SFH 426 fpl06724 GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g

SA293

Abstract: SA273 988000
Contextual Info: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

L256ML

Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

SH56

Abstract: 13001 s 25C00
Contextual Info: MITSUBISHI MICROCOMPUTERS M306V2ME-XXXFP M306V2EEFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V2ME-XXXFP and M306V2EEFP are single-chip microcomputers using the high-performance

0E-22

Abstract: function PWM IC 14 PIN sda scl
Contextual Info: MITSUBISHI MICROCOMPUTERS M306V2ME-XXXFP M306V2EEFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V2ME-XXXFP and M306V2EEFP are single-chip microcomputers using the high-performance

29gl064

Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,

2B60000

Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

siemens SFH nm

Abstract: I03f
Contextual Info: SIEMENS GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAIAs Infrared Emitter in SMT Package 3 < o0 a 3.0 0.1 typ 0.18 J | I 0.12 / JO .6 0.4 SFH 421 TO PLEDq Cathode/Collector Approx. weight 0.03 g Collector SFH 421 SFH 426 GPL06724 Emitter Collector/Cathode marking