SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
|
Original
|
s29wsxxxns29ws256ns29ws128ns29ws064n+416-bitsa6954ws128nffc00
|
PDF
|
circuit card assy input filter for miller 200 Dx
Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Contextual Info: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper
|
Original
|
tms320c3xspru194circuit card assy input filter for miller 200 dx64 point radix 2 fft+8lm318 listdsp10174as20 ttlradix-4 dit fft c codetlc32040ctms320tms320c31tms320c32
|
PDF
|
HDMP 1034 AG
Abstract: HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16
Contextual Info: Released Datasheet PMC-Sierra, Inc. Long Form Data Sheet PMC-980618 Issue 3 PM73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Released Issue 3: JUN 1999 Released Datasheet PMC-Sierra, Inc. PMC-980618
|
Original
|
pmc-980618pm73487pmc-981001hdmp 1034 ag+9hdmp-1032amcc date code markingamcc 460, date code4x511sg ag20af2-2hdmp 1032 1034marking m29transistor ah-16
|
PDF
|
C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
|
Original
|
mx29lw128t/b/u/d128m-bitjan/27/2003mar/28/2003+9may/16/2003may/29/2003c000h-dfffh24blocksfb0000h-fbffffh9f0000h-9fffffhc10000h-c1ffffhff4000h-ff5fffh8a0000h8affffh
|
PDF
|
lt 7216
Abstract: SH7060 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361
Contextual Info: Hitachi Microcomputer Development Environment System SH7060 E8000 Emulator HS7060EDD81H User’s Manual ADE-702-217 Rev. 1.0 08/03/00 Hitachi, Ltd. HS7060EDD81HE A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
|
Original
|
sh7060e8000hs7060edd81hade-702-217+11hs7060edd81hek28863lt 7216h9700h8108bt 58ahitachi marking formatic 7217 unit counteric tad 8361t3.15a 250vtad 8361
|
PDF
|
A81DC
Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF
|
OCR Scan
|
ane408/ddsp56000/1ane408ane008+11300-3400hza81dca21dca51dcsg 2368fe8800ed8000e78000fa64000110ffffe7040
|
PDF
|
marking SMD crystal CODES
Abstract: Q 8,0-JXG75P2-12-30/100-T3-LF JTX310 Q25,0-SMU4-18-30/50-FU-LF JAUCH Quartz Crystals 16 Mhz Q8.0-SMU4-18-30/50-T1-LF
Contextual Info: F REQUENCY C ONTROL P RODUCTS JAUCH QUARTZ CRYSTALS individual working copy 03/11/14 THE SPECIALIST FOR FREQUENCY CONTROL PRODUCTS The Specialist for frequency control products Worldwide Presence expert advice by quartz crystal specialists Technical Customer Support
|
Original
|
jxg32p4jxg53p4jxg53p2d-78056+6marking smd crystal codesq 8,0-jxg75p2-12-30/100-t3-lfjtx310q25,0-smu4-18-30/50-fu-lfjauch quartz crystals 16 mhzq8.0-smu4-18-30/50-t1-lf
|
PDF
|
JESD97
Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
m29dw128ftsop5632-word16mbit+448mbittbga64jesd976c80
|
PDF
|
SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
|
Original
|
am29lv2562ms29gl512nsa452sa336+7sa424120rsa487ee8000a78000a7ffffc58000c5ffffsa4871
|
PDF
|
S29WS256N
Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
|
Original
|
s71ws512ne0bfwzzs71ws512s29ws256n54mhz+2128mb96-ball
|
PDF
|
M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
m29w128fhm29w128flwords/16tsop56+532-word64-bytesmemory protection devicesjesd97m29w128f
|
PDF
|
FL128P
Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
|
Original
|
s25fl128p104-mhzfl128pspansion fl128p |
PDF
|
samsung electronics ba41
Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
k8c56256mba0-a23000000fh+5000001fh000002fh0000000hsamsung electronics ba41ba175
|
PDF
|
BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
|
Original
|
k8a5615et54mhz22ech22fch+1422edh22fdhk8a56156et70ns---ba379ba377ba339ba438ba429ba416ba-302ba512ba308ba324
|
PDF
|
|
|
JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
|
Original
|
m29dw128ftsop5632-wordtbga64+616mbit48mbitjesd97esn 234d25785pwa
|
PDF
|
IS29GL256
Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns
|
Original
|
is29gl25632768k16384k16-bit+58-word/16-byte32-word/64-byte128-word/256-byte8-word/16byteis29gl256-jtle
|
PDF
|
JXG75P2
Contextual Info: Quartz Crystal • JXE• JXG75P2 63 Automotive SMD Crystal 2 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package all versions are AEC-Q200 qualified HMR version with extended shock & vibration immunity RKE version withstands 100x drop test from 150 cm
|
Original
|
jxg75p2aec-q2002002/95/ec8a000 |
PDF
|
MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
|
Original
|
mx29gl256fpm154464kw/128kb16-byte/8-word+1164-byte/32-word128-word100mamx29gl256flt2i-90qmx29gl256fhtmx29gl256mx29gl256fht2i-90qmx29gl256flmx29gl256fh29gl256mx29gl256flxfi-90q
|
PDF
|
S25FL129
Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
Contextual Info: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
|
Original
|
s25fl129p128-mbit104-mhzs25fl129+8s25fl129p0fl129pfootprint wsons25fl128p sa255 sckfab024footprint wson-8reader sa223fac024
|
PDF
|
asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
|
Original
|
s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14s29glxxxn00-b-5s29gl032mlaa064asme sa388gl128ma2113s29gl256e78000s29gl128ntsop56 s29gl128nsa32sa35s29glxxxmbga-63
|
PDF
|
120R
Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
am29lv2562m120rc8800 |
PDF
|
DQ141
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
|
Original
|
m29dw128f32-word16mbit48mbit+1dq141
|
PDF
|
l256mh113
Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
am29lv256ml256mh113l256ml123r |
PDF
|
06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
k8f56256mb070000h-07ffffh060000h-06ffffh+16050000h-05ffffh040000h-04ffffh030000h-03ffffh020000h-02ffffh010000h-01ffffh00c000h-00ffffh06secba21316n10ba167ba18415etba244ba242k8f5615etmsamsung nor flash
|
PDF
|
